參數(shù)資料
型號(hào): SN74ACT3638PCB
廠商: Texas Instruments, Inc.
英文描述: 512 】 32 】 2 CLOCKED BIDIRECTIONAL FIRST-IN, FIRST-OUT MEMORY
中文描述: 512】32】2時(shí)鐘雙向先入先出存儲(chǔ)器
文件頁(yè)數(shù): 27/30頁(yè)
文件大?。?/td> 461K
代理商: SN74ACT3638PCB
SN74ACT3638
512
×
32
×
2
CLOCKED BIDIRECTIONAL FIRST-IN, FIRST-OUT MEMORY
SCAS228D – JUNE 1992 – REVISED APRIL 1998
27
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
switching characteristics over recommended ranges of supply voltage and operating free-air
temperature, C
L
= 30 pF (see Figures 1 through 23)
PARAMETER
’ACT3638-15
MIN
’ACT3638-20
MIN
’ACT3638-30
MIN
UNIT
MAX
MAX
MAX
fmax
ta
tpd(C-IR)
tpd(C-OR)
tpd(C-R)
tpd(W-R)
tpd(C-AE)
tpd(C-AF)
66.7
50
33.4
MHz
Access time, CLKA
to A0–A31 and CLKB
to B0–B31
Propagation delay time, CLKA
to IRA and CLKB
to IRB
Propagation delay time, CLKA
to ORA and CLKB
to ORB
Propagation delay time, CLKA
to RDYA and CLKB
to RDYB
Propagation delay time, W/RA to RDYA and W/RB to RDYB
Propagation delay time, CLKA
to AEA and CLKB
to AEB
Propagation delay time, CLKA
to AFA and CLKB
to AFB
Propagation delay time, CLKA
to MBF1 low or MBF2 high and
CLKB
to MBF2 low or MBF1 high
Propagation delay time, CLKA
to B0–B31 and CLKB
to
A0–A31
3
11
3
13
3
15
ns
1
8
1
10
1
12
ns
1
8
1
10
1
12
ns
1
8
1
10
1
12
ns
1
8
1
10
1
12
ns
1
8
1
10
1
12
ns
1
8
1
10
1
12
ns
tpd(C-MF)
0
8
0
10
0
12
ns
tpd(C-MR)
3
13.5
3
15
3
17
ns
tpd(M-DV)
Propagation delay time, MBA to A0–A31 valid and MBB to
B0–B31 valid
3
13
3
15
3
17
ns
tpd(R-F)
Propagation delay time, RST1 low to AEB low, AFA high, and
MBF1 high, and RST2 low to AEA low, AFB high, and MBF2
high
1
15
1
20
1
30
ns
ten
Enable time, CSA and W/RA low to A0–A31 active and CSB
low and W/RB high to B0–B31 active
2
12
2
13
2
14
ns
tdis
Disable time, CSA or W/RA high to A0–A31 at high impedance
and CSB high or W/RB low to B0–B31 at high impedance
Writing data to the mail1 register when the B0–B31 outputs are active and MBB is high
Writing data to the mail2 register when the A0–A31 outputs are active and MBA is high
1
13
1
14
1
15
ns
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SN74ACT3641-20PQ 功能描述:先進(jìn)先出 1024 x 36 synch 先進(jìn)先出 Memory RoHS:否 制造商:IDT 電路數(shù)量: 數(shù)據(jù)總線寬度:18 bit 總線定向:Unidirectional 存儲(chǔ)容量:4 Mbit 定時(shí)類型:Synchronous 組織:256 K x 18 最大時(shí)鐘頻率:100 MHz 訪問(wèn)時(shí)間:10 ns 電源電壓-最大:3.6 V 電源電壓-最小:6 V 最大工作電流:35 mA 最大工作溫度:+ 85 C 封裝 / 箱體:TQFP-80 封裝:
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