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參數(shù)資料
| 型號(hào)： | SMCTTA32N14A10 |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | Advanced Pulse Power Device N-MOS VCS, ThinPakTM |
| 中文描述： | 先進(jìn)的脈沖功率器件蘼馬鞍山VCS有ThinPakTM |
| 文件頁(yè)數(shù)： | 5/5頁(yè) |
| 文件大?。?/td> | 671K |
| 代理商： | SMCTTA32N14A10 |
Application Notes
Packaging and Handling
A1.
Junction Temperature Calculation
The figure below shows a lump model of the thermal properties of the size 4 thinPak packaged VCS, from the 2-mil solder
on the top of the lid on the left to the 2-mil solder on the bottom of the device on the right. By adding the user's lump model
of the rest of the thermal system the user can calculate the junction and case temperature rise under any operating
condition.
A2.
Calculation of Pulses to Failure for Intermediate/Long Pulse Widths
The user may calculate the Number of Pulses to failure (N
F
) for long to intermedeiate pulse widths (not covered in the
typical performance curve section) by applying the junction temperature rise (dT), calculated as described in A1, to the
formula N
F
=(300/dT)9 .
A3.
Use of Gate Return Bond Area.
The MCT was designed for high di/dt applications. An independent cathode connection or "Gate Return Bond Area" was
provided to minimize the effects of rapidly changing Anode-Cathode current on the Gate control voltage, (V=L*di/dt). It is
therefore, critcal that the user utilize the Gate Return Bond Area as the point at which the gate driver reference (return) is
attached to the VCS device.
Top
Cathode-Gate
Bottom
Anode
Side
Anode
(Bottom) Side
Interface
Cathode-Gate
(Top) Side
Interface
1. All metal surfaces are tinned using 63pb/37sn
solder.
2. Installation reflow temperature should not exceed
260
o
C or internal package degradation may result.
3. Package may be cooled from either top or bottom
(See Figures 7 & A1 Application Notes.)
4. As with all MOS gated devices, proper handling
procedures must be observed to prevent electrostatic
discharge which may result in permanent damage to
the gate of the device
Device
Junction
Package Dimensions
Advanced Pulse Power Device
N-MOS VCS, ThinPak
TM
SMCT TA32N14A10
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