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參數(shù)資料
| 型號(hào)： | SL05T1G |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | 300 Watt, SOT-23 Low Capacitance TVS for High Speed Line Protections |
| 中文描述： | 300 W, UNIDIRECTIONAL, SILICON, TVS DIODE, TO-236 |
| 封裝： | LEAD FREE, PLASTIC, CASE 318-08, 3 PIN |
| 文件頁(yè)數(shù)： | 3/5頁(yè) |
| 文件大小： | 66K |
| 代理商： | SL05T1G |
SL05T1 Series
http://onsemi.com
3
ELECTRICAL CHARACTERISTICS
Device
Device
Marking
V
RWM
(V)
I
R
@ V
RWM
( A)
Breakdown Voltage
(Note 4)
V
C
, Clamping Voltage
(Note 5)
Max
I
PP
(A)
Capacitance
V
BR
@ 1 mA
(Volts)
Min
@ 1 A
@ 5 A
@ V
R
= 0 V, 1 MHz
(pF)
Typ
Max
(V)
(V)
Max
SL05
L05
5.0
20
6.0
8.0
9.8
11
17
3.5
5.0
SL15
L15
15
1.0
16.7
18.5
24
30
10
3.5
5.0
SL24
L24
24
1.0
26.7
29
43
55
5.0
3.5
5.0
4. V
BR
measured at pulse test current of 1 mA at an ambient temperature of 25
°
C
5. Surge current waveform per Figure 2
TYPICAL CHARACTERISTICS
0.1
10
10
Figure 1. Maximum Peak Power Rating
1
PULSE WIDTH ( s)
100
1000
1
0.1
0.01
Figure 2. 8
×
20 s Pulse Waveform
P
P
,
100
90
80
70
60
50
40
30
20
10
0
0
20
40
60
t, TIME ( s)
%
t
P
t
r
PULSE WIDTH (t
P
) IS DEFINED
AS THAT POINT WHERE THE
PEAK CURRENT DECAY = 8 s
PEAK VALUE I
RSM
@ 8 s
HALF VALUE I
RSM
/2 @ 20 s
80
Figure 3. Typical Junction Capacitance
55
25
150
10
1
0.1
0.01
Figure 4. Typical Leakage Over Temperature
TEMPERATURE (
°
C)
@ 50% V
RWM
4
3.5
3
2
1.5
0.5
0
C
2.5
1
@ ZERO BIAS
@ V
RWM
SL05
SL15
SL24
L
SL05T1
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