參數(shù)資料
型號： SKA06N60
廠商： INFINEON TECHNOLOGIES AG
英文描述： CLAMP CA FLAT 3484-1000 3M
中文描述： 快速IGBT在不擴散核武器條約與軟，恢復快反平行快恢復二極管技術
文件頁數(shù)： 3/15頁
文件大?。?/td> 459K
代理商： SKA06N60
SKP06N60,
SKB06N60
SKA06N60
3
Jul-02
Switching Characteristic, Inductive Load,
at
T
j
=25
°
C
Value
typ.
Parameter
Symbol
Conditions
min.
max.
Unit
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
Anti-Parallel Diode Characteristic
Diode reverse recovery time
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
-
-
-
-
-
-
-
25
18
220
54
0.110
0.105
0.215
30
22
264
65
0.127
0.137
0.263
ns
T
j
=25
°
C,
V
CC
=400V,
I
C
=6A,
V
GE
=0/15V,
R
G
=50
,
L
σ
C
σ
Energy losses include
“tail” and diode
reverse recovery.
1)
=180nH,
1)
=250pF
mJ
t
rr
t
S
t
F
Q
rr
I
rrm
di
rr
/dt
-
-
-
-
-
-
200
17
183
200
2.8
180
-
-
-
-
-
-
ns
Diode reverse recovery charge
Diode peak reverse recovery current
Diode peak rate of fall of reverse
recovery current during
t
b
nC
A
A/
μ
s
T
j
=25
°
C,
V
R
=200V,
I
F
=6A,
di
F
/dt
=200A/
μ
s
Switching Characteristic, Inductive Load,
at
T
j
=150
°
C
Value
typ.
Parameter
Symbol
Conditions
min.
max.
Unit
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
Anti-Parallel Diode Characteristic
Diode reverse recovery time
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
-
-
-
-
-
-
-
24
17
248
70
0.167
0.153
0.320
29
20
298
84
0.192
0.199
0.391
ns
T
j
=150
°
C
V
CC
=400V,
I
C
=6A,
V
GE
=0/15V,
R
G
=50
,
L
σ
C
σ
Energy losses include
“tail” and diode
reverse recovery.
1)
=180nH,
1)
=250pF
mJ
t
rr
t
S
t
F
Q
rr
I
rrm
di
rr
/dt
-
-
-
-
-
-
290
27
263
500
5.0
200
-
-
-
-
-
-
ns
Diode reverse recovery charge
Diode peak reverse recovery current
Diode peak rate of fall of reverse
recovery current during
t
b
nC
A
A/
μ
s
T
j
=150
°
C
V
R
=200V,
I
F
=6A,
di
F
/dt
=200A/
μ
s
1)
Leakage inductance
L
σ
and Stray capacity
C
σ
due to dynamic test circuit in Figure E.
相關PDF資料
PDF描述
SKA06N60 Fast S-IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode( NPT 技術中的快速 S-IGBT)
SKB02N120 Fast S-IGBT in NPT-technology( NPT 技術中的快速S-IGBT)
SKP02N120 Fast S-IGBT in NPT-technology( NPT 技術中的快速S-IGBT)
skb02n60 Fast S-IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode( NPT 技術中的快速 S-IGBT)
SKP02N60 Fast S-IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode( NPT 技術中的快速 S-IGBT)
相關代理商/技術參數(shù)
參數(shù)描述
SKA06N60XKSA1 制造商:Infineon Technologies AG 功能描述:Trans IGBT Chip N-CH 600V 9A 3-Pin(3+Tab) TO-220FP 制造商:Infineon Technologies AG 功能描述:IGBT PRODUCTS - Rail/Tube 制造商:Infineon Technologies AG 功能描述:IGBT NPT 600V 9A 32W TO220-3
SKA1 制造商:SEMIKRON 制造商全稱:Semikron International 功能描述:Avalanche Diode
SKA1/13 制造商:SEMIKRON 功能描述:Diode 1.45A 1300V Avalanche Axial E33
SKA1/17 制造商:SEMIKRON 功能描述:Diode 1.45A 1700V Avalanche Axial E33
SKA100M025 功能描述:鋁質電解電容器 - 帶引線 10uF 25V RoHS:否 制造商:Kemet 引線類型: 電容:220 uF 容差:20 % 電壓額定值:25 V 工作溫度范圍: 端接類型:Radial 外殼直徑:8 mm 外殼長度:11 mm 引線間隔:5 mm 產(chǎn)品:General Purpose Electrolytic Capacitors 封裝:Bulk
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