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參數(shù)資料
| 型號(hào)： | SIGC18T60SNC |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | IGBT Chip in NPT-technology |
| 中文描述： | 在不擴(kuò)散核武器條約IGBT芯片技術(shù) |
| 文件頁(yè)數(shù)： | 2/4頁(yè) |
| 文件大?。?/td> | 76K |
| 代理商： | SIGC18T60SNC |
SIGC18T60SNC
Edited by INFINEON Technologies AI PS DD HV3, L 7242-S, Edition 2, 28.11.2003
MAXIMUM RATINGS:
Parameter
Symbol
Value
Unit
Collector-emitter voltage,
T
j=25
°
C
V
CE
600
V
DC collector current, limited by T
jmax
I
C
1 )
A
Pulsed collector current, t
p
limited by T
jmax
I
cpuls
60
A
Gate emitter voltage
V
GE
±
20
V
Operating junction and storage temperature
T
j
, T
stg
-55 ... +150
°C
1 )
depending on thermal properties of assembly
STATIC CHARACTERISTICS
(tested on chip),
T
j=25
°
C, unless otherwise specified:
Value
Parameter
Symbol
Conditions
min.
typ.
max.
Unit
Collector-emitter breakdown voltage
V
(BR)CES
V
GE
=0V, I
C
=500μA
600
Collector-emitter saturation voltage
V
CE(sat)
V
GE
=15V, I
C
=20A
1.6
1.9
2.5
Gate-emitter threshold voltage
V
GE(th)
I
C
=500μA, V
GE
=V
CE
3
4
5
V
Zero gate voltage collector current
I
CES
V
CE
=600V, V
GE
=0V
70
μA
Gate-emitter leakage current
DYNAMIC CHARACTERISTICS
(tested at component):
I
GES
V
CE
=0V, V
GE
=20V
120
nA
Value
typ.
1100
Parameter
Symbol
Conditions
min.
max.
1320
Unit
Input capacitance
C
iss
C
oss
C
rss
-
Output capacitance
Reverse transfer capacitance
SWITCHING CHARACTERISTICS
(tested at component)
,
Inductive Load:
-
-
107
63
128
75
V
CE
=25V
V
GE
=0V
f
=1MHz
pF
Value
Parameter
Symbol
Conditions*
min.
typ.
max.
Unit
Turn-on delay time
t
d(on)
-
36
46
Rise time
t
r
-
30
36
Turn-off delay time
t
d(off)
-
250
300
Fall time
t
f
T
j
=150
°
C
V
CC
=400V
I
C
=20A
V
GE
=+15/0V
R
G
=16
-
63
76
ns
* switching conditions different to 600V LowLoss, under comparable switching conditions 40% faster turnoff
than LowLoss. V
alues also influenced by parasitic L- and C- in measurement and package.
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