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參數(shù)資料
| 型號： | SIGC156T60NR2C |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | IGBT Chip in NPT-technology |
| 中文描述： | 在不擴散核武器條約IGBT芯片技術(shù) |
| 文件頁數(shù)： | 4/4頁 |
| 文件大小： | 77K |
| 代理商： | SIGC156T60NR2C |
SIGC156T60NR2C
Edited by INFINEON Technologies AI PS DD HV3, L 7282-M, Edition 2, 28.11.2003
FURTHER ELECTRICAL CHARACTERISTICS:
This chip data sheet refers to the
device data sheet
BSM 200 GD 60 DLC
Econo Pack 3
Description:
AQL 0,65 for visual inspection according to failure catalog
Electrostatic Discharge Sensitive Device according to MIL-STD 883
Test-Normen Villach/Prüffeld
Published by
Infineon Technologies AG
,
Bereich Kommunikation
St.-Martin-Strasse 53,
D-81541 München
Infineon Technologies AG 2002
All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be considered as warranted
characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement,
regarding circuits, descriptions and charts stated herein.
Infineon Technologies is an approved CECC manufacturer.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies Office in Germany or our Infineon Technologies Representatives world-wide (see
address list).
Warnings
Due to technical requirements components may contain dangerous substances. For information on the types
in question please contact your nearest Infineon Technologies Office.
Infineon Technologies components may only be used in life-support devices or systems with the express
written approval of Infineon Technologies, if a failure of such components can reasonably be expected to
cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or
system. Life support devices or systems are intended to be implanted in the human body, or to support
and / or maintain and sustain and / or protect human life. If they fail, it is reasonable to assume that the
health of the user or other persons may be endangered.
相關PDF資料 |
PDF描述 |
|---|---|
| SIGC158T120R3L | IGBT3 Chip |
| SIGC158T120R3 | IGBT3 Chip |
| SIGC158T170R3 | IGBT3 Chip |
| SIGC15T60 | IGBT3 Chip |
| SIGC16T120CL | IGBT Chip in NPT-technology |
相關代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SIGC156T60SNR2C | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:IGBT Chip in NPT-technology 600V NPT technology 100μm chip |
| SIGC158T120R3 | 功能描述:IGBT 模塊 1200V 150A IGBT RoHS:否 制造商:Infineon Technologies 產(chǎn)品:IGBT Silicon Modules 配置:Dual 集電極—發(fā)射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續(xù)集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝: |
| SIGC158T120R3L | 功能描述:IGBT 晶體管 IGBT RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| SIGC158T170R3 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:IGBT3 Chip |
| SIGC15T60 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:IGBT3 Chip |
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