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參數(shù)資料
| 型號(hào)： | SIGC12T60NC |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | IGBT Chip in NPT-technology |
| 中文描述： | 在不擴(kuò)散核武器條約IGBT芯片技術(shù) |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大?。?/td> | 77K |
| 代理商： | SIGC12T60NC |
SIGC12T60NC
Edited by INFINEON Technologies AI PS DD HV3, L 7222-M, Edition 2, 28.11.2003
IGBT Chip in NPT-technology
FEATURES:
600V NPT technology
100μm chip
positive temperature coefficient
easy paralleling
This chip is used for:
IGBT Modules
Applications:
drives
G
C
E
Chip Type
V
CE
I
Cn
Die Size
Package
Ordering Code
Q67041-A4688-
A001
SIGC12T60NC
600V
10A
3.5 x 3.5 mm
2
sawn on foil
MECHANICAL PARAMETER:
Raster size
3.5 x 3.5
Area total / active
12.25 / 8.7
Emitter pad size
1.989 x 1.583
Gate pad size
1.1 x 0.694
mm
2
Thickness
100
μm
Wafer size
150
mm
Flat position
0
deg
Max.possible chips per wafer
1219
Passivation frontside
Photoimide
Emitter metallization
3200 nm Al Si 1%
Collector metallization
1400 nm Ni Ag –system
suitable for epoxy and soft solder die bonding
Die bond
electrically conductive glue or solder
Wire bond
Al,
≤
500μm
Reject Ink Dot Size
0.65mm ; max 1.2mm
Recommended Storage Environment
store in original container, in dry nitrogen,
< 6 month at an ambient temperature of 23°C
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|---|---|
| SIGC12T60SNC | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:IGBT Chip in NPT-technology 600V NPT technology positive temperature coefficient |
| SIGC144T170R2C | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:IGBT Chip in NPT-technology 1700V NPT technology 280 μm chip |
| SIGC144T170R2C_09 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:IGBT Chip in NPT-technology 1700V NPT technology 280 μm chip |
| SIGC14T60NC | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:IGBT Chip in NPT-technology |
| SIGC14T60SNC | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:IGBT Chip in NPT-technology 600V NPT technology 100μm chip short circuit prove |
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