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參數(shù)資料
| 型號(hào)： | SIGC04T60 |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | IGBT3 Chip |
| 中文描述： | IGBT3芯片 |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大?。?/td> | 85K |
| 代理商： | SIGC04T60 |
SIGC04T60
Edited by INFINEON Technologies AI PS DD CLS, L7491A, Edition 2, 27.01.2005
IGBT
3
Chip
FEATURES:
600V Trench & Field Stop technology
low V
CE(sat)
low turn-off losses
short tail current
positive temperature coefficient
easy paralleling
Chip Type
This chip is used for:
power module
discrete components
Applications:
drives
white goods
resonant applications
G
C
E
V
CE
I
Cn
Die Size
Package
Ordering Code
Q67050-
A4330-A101
SIGC04T60
600V
6A
1.98 x 1.96 mm
2
sawn on foil
MECHANICAL PARAMETER:
Raster size
1.98 x 1.96
Emitter pad size
1.254 x 1.273
Gate pad size
0.266 x 0.266
mm
2
Area total / active
3.9 / 2.14
mm
2
Thickness
70
μm
Wafer size
150
mm
Flat position
0
deg
Max. possible chips per wafer
3779 pcs
Passivation frontside
Photoimide
Emitter metallization
3200 nm AlSiCu
Collector metallization
1400 nm Ni Ag –system
suitable for epoxy and soft solder die bonding
Die bond
electrically conductive glue or solder
Wire bond
Al, <500μm
Reject ink dot size
0.65mm ; max 1.2mm
Recommended storage environment
store in original container, in dry nitrogen,
< 6 month at an ambient temperature of 23°C
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| SIGC06T120CS | IGBT Chip in NPT-technology |
| SIGC06T60G | IGBT3 Chip |
| SIGC06T60 | IGBT3 Chip |
| SIGC08T60 | IGBT3 Chip |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SIGC04T60G | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:IGBT3 Chip |
| SIGC04T60GS | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:IGBT3 Chip 600V Trench & Field Stop technology positive temperature coefficient |
| SIGC05T60SNC | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:IGBT Chip in NPT-technology |
| SIGC06T120CS | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:IGBT Chip in NPT-technology |
| SIGC06T60 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:IGBT3 Chip |
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