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參數(shù)資料
| 型號： | SI9939DY-T1 |
| 廠商： | VISHAY SILICONIX |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 3500 mA, 30 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 文件頁數(shù)： | 1/7頁 |
| 文件大?。?/td> | 121K |
| 代理商： | SI9939DY-T1 |
Si9939DY
Vishay Siliconix
Document Number: 70146
S-00652—Rev. G, 27-Mar-00
www.vishay.com
S FaxBack 408-970-5600
1
Complimentary 30-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
ID (A)
NCh
l
30
0.05 @ VGS = 10 V
"3.5
N-Channel
30
0.07 @ VGS = 6 V
"3
0.08 @ VGS = 4.5 V
"2.5
PCh
l
30
0.10 @ VGS = –10 V
"3.5
P-Channel
–30
0.12 @ VGS = –6V
"3
0.16 @ VGS = –4.5 V
"2.5
S1
D1
G1
D1
S2
D2
G2
D2
SO-8
5
6
7
8
Top View
2
3
4
1
N-Channel MOSFET
D1 D1
G1
S1
S2
G2
D2 D2
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
N-Channel
P-Channel
Unit
Drain-Source Voltage
VDS
30
–30
V
Gate-Source Voltage
VGS
"20
V
Continuous Drain Current (TJ = 150_C)a
TA = 25_C
ID
"3.5
A
Continuous Drain Current (TJ = 150_C)a
TA = 70_C
ID
"2.8
A
Pulsed Drain Current
IDM
"20
A
Continuous Source Current (Diode Conduction)a
IS
1.7
–1.7
Maximum Power Dissipationa
TA = 25_C
PD
2.0
W
Maximum Power Dissipationa
TA = 70_C
PD
1.3
W
Operating Junction and Storage Temperature Range
TJ, Tstg
–55 to 150
_C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
N- or P- Channel
Unit
Maximum Junction-to-Ambienta
RthJA
62.5
_C/W
Notes
a.
Surface Mounted on FR4 Board, t
v 10 sec.
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