- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄225180 > SI4807DY-E3 (VISHAY SILICONIX) 6 A, 30 V, 0.035 ohm, P-CHANNEL, Si, POWER, MOSFET PDF資料下載
參數(shù)資料
| 型號： | SI4807DY-E3 |
| 廠商： | VISHAY SILICONIX |
| 元件分類： | JFETs |
| 英文描述： | 6 A, 30 V, 0.035 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | SO-8 |
| 文件頁數(shù)： | 4/6頁 |
| 文件大?。?/td> | 84K |
| 代理商： | SI4807DY-E3 |
Si4807DY
Vishay Siliconix
www.vishay.com
S FaxBack 408-970-5600
2-4
Document Number: 70643
S-00652—Rev. E, 27-Mar-00
TYPICAL CHARACTERISTICS (VG1 = VG2, 25_C UNLESS NOTED)
Power
(W)
–0.6
–0.4
–0.2
–0.0
0.2
0.4
0.6
0.8
–50
0
50
100
150
0
0.03
0.06
0.09
0.12
0.15
02468
10
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
Threshold Voltage
Single Pulse Power
Normalized Thermal Transient Impedance, Junction-to-Ambient
Square Wave Pulse Duration (sec)
2
1
0.1
0.01
10–4
10–3
10–2
10–1
1
Normalized
Ef
fective
T
ransient
Thermal
Impedance
30
–
On-Resistance
(
r DS(on)
W
)
VSD – Source-to-Drain Voltage (V)
VGS – Gate-to-Source Voltage (V)
–
Source
Current
(A)
I
S
TJ – Temperature (_C)
Time (sec)
V
ariance
(V)
V
GS(th)
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
TC = 25_C
Single Pulse
TJ = 150_C
TJ = 25_C
ID = 6 A
ID = 250 mA
0.01
20
1
10
0
0.2
0.4
0.6
0.8
1.0
1.4
1.2
60
0
30
40
30
20
10
0.1
1
10
1. Duty Cycle, D =
2. Per Unit Base = RthJA = 55_C/W
3. TJM – TA = PDMZthJA(t)
t1
t2
t1
t2
Notes:
4. Surface Mounted
PDM
50
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| SI6463DQ | P-Channel 2.5V Specified PowerTrench MOSFET |
| SI6466DQ | 30V N-Channel PowerTrench MOSFET |
| SI9939DY-T1 | 3500 mA, 30 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| SI9959DY-T1 | 2000 mA, 60 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| SIL30C-12SADJ-VS | 1-OUTPUT DC-DC REG PWR SUPPLY MODULE |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SI4807DY-T1 | 功能描述:MOSFET 30V 6/0.9A 2.3W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI4807DY-T1-E3 | 功能描述:MOSFET 30V 6/0.9A 2.3W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI4808DY | 功能描述:MOSFET 30V 7.5A 2W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI4808DY-E3 | 功能描述:MOSFET 30V 7.5A 2W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI4808DY-T1 | 功能描述:MOSFET 30V 7.5A 2W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。