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參數(shù)資料
| 型號： | Si4122-BM |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | DUAL-BAND RF SYNTHESIZER WITH INTEGRATED VCOS FOR WIRELESS COMMUNICATIONS |
| 中文描述： | 雙波段射頻合成器集成的無線通信和VCO |
| 文件頁數(shù)： | 9/34頁 |
| 文件大?。?/td> | 713K |
| 代理商： | SI4122-BM |
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Si4133
Rev. 1.1
9
RF1 Harmonic Suppression
Second Harmonic
—
–26
–20
dBc
RF2 Harmonic Suppression
—
–26
–20
dBc
IF Harmonic Suppression
—
–26
–20
dBc
RFOUT Power Level
Z
L
= 50
–8
–3
1
dBm
RFOUT Power Level
2
Z
L
= 50
,
RF1 active,
Extended frequency
operation
–14
–7
1
dBm
IFOUT Power Level
Z
L
= 50
–8
–4
0
dBm
RF1 Output Reference Spurs
Offset = 200 kHz
—
–65
—
dBc
Offset = 400 kHz
—
–71
—
dBc
Offset = 600 kHz
—
–75
—
dBc
RF2 Output Reference Spurs
Offset = 200 kHz
—
–65
—
dBc
Offset = 400 kHz
—
–71
—
dBc
Offset = 600 kHz
—
–75
—
dBc
Power Up Request to Synthesizer
Ready
3
Time
t
pup
Figures 4, 5
—
40/f
φ
50/f
φ
Power Down Request to Synthesizer
Off
4
Time
t
pdn
Figures 4, 5
—
—
100
ns
Table 5. RF and IF Synthesizer Characteristics (Continued)
(V
DD
= 2.7 to 3.6 V, T
A
= –40 to 85°C)
Parameter
1
Symbol
Test Condition
Min
Typ
Max
Unit
Notes:
1.
f
φ
= 200 kHz, RF1 = 1.6 GHz, RF2 = 1.2 GHz, IFOUT = 550 MHz, LPWR = 0, for all parameters unless otherwise noted.
2.
Extended frequency operation only. V
DD
≥
3.0 V, MLP only, VCO Tuning Range fixed by directly shorting the RFLA and
RFLB pins. See Application Note 41 for more details on the Si4133 extended frequency operation.
3.
From power up request (PWDNB
↑
or SENB
↑
during a write of 1 to bits PDIB and PDRB in Register 2) to RF and IF
synthesizers ready (settled to within 0.1 ppm frequency error).
4.
From power down request (PWDNB
↓
, or SENB
↑
during a write of 0 to bits PDIB and PDRB in Register 2) to supply
current equal to I
PWDN
.
相關(guān)PDF資料 |
PDF描述 |
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| Si4122-BT | DUAL-BAND RF SYNTHESIZER WITH INTEGRATED VCOS FOR WIRELESS COMMUNICATIONS |
| Si4123 | DUAL-BAND RF SYNTHESIZER WITH INTEGRATED VCOS FOR WIRELESS COMMUNICATIONS |
| Si4123-BM | DUAL-BAND RF SYNTHESIZER WITH INTEGRATED VCOS FOR WIRELESS COMMUNICATIONS |
| Si4123-BT | DUAL-BAND RF SYNTHESIZER WITH INTEGRATED VCOS FOR WIRELESS COMMUNICATIONS |
| Si4133 | DUAL-BAND RF SYNTHESIZER WITH INTEGRATED VCOS FOR WIRELESS COMMUNICATIONS |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SI4122-BMR | 功能描述:射頻無線雜項 Single Band (RF2/IF) RoHS:否 制造商:Texas Instruments 工作頻率:112 kHz to 205 kHz 電源電壓-最大:3.6 V 電源電壓-最小:3 V 電源電流:8 mA 最大功率耗散: 工作溫度范圍:- 40 C to + 110 C 封裝 / 箱體:VQFN-48 封裝:Reel |
| SI4122-BT | 功能描述:射頻無線雜項 USE 634-SI4122-D-GT FOR NEW DESIGNS RoHS:否 制造商:Texas Instruments 工作頻率:112 kHz to 205 kHz 電源電壓-最大:3.6 V 電源電壓-最小:3 V 電源電流:8 mA 最大功率耗散: 工作溫度范圍:- 40 C to + 110 C 封裝 / 箱體:VQFN-48 封裝:Reel |
| SI4122-D-GM | 功能描述:鎖相環(huán) - PLL SINGLE BAND RF MLP-28 RoHS:否 制造商:Silicon Labs 類型:PLL Clock Multiplier 電路數(shù)量:1 最大輸入頻率:710 MHz 最小輸入頻率:0.002 MHz 輸出頻率范圍:0.002 MHz to 808 MHz 電源電壓-最大:3.63 V 電源電壓-最小:1.71 V 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 封裝 / 箱體:QFN-36 封裝:Tray |
| SI4122-D-GMR | 功能描述:射頻無線雜項 Single-Band RF Synthesizer RoHS:否 制造商:Texas Instruments 工作頻率:112 kHz to 205 kHz 電源電壓-最大:3.6 V 電源電壓-最小:3 V 電源電流:8 mA 最大功率耗散: 工作溫度范圍:- 40 C to + 110 C 封裝 / 箱體:VQFN-48 封裝:Reel |
| SI4122-D-GT | 功能描述:鎖相環(huán) - PLL SINGLE-BAND RF TSSOP-24 RoHS:否 制造商:Silicon Labs 類型:PLL Clock Multiplier 電路數(shù)量:1 最大輸入頻率:710 MHz 最小輸入頻率:0.002 MHz 輸出頻率范圍:0.002 MHz to 808 MHz 電源電壓-最大:3.63 V 電源電壓-最小:1.71 V 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 封裝 / 箱體:QFN-36 封裝:Tray |
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