參數(shù)資料
型號(hào)： SHF-0589
廠商： Electronic Theatre Controls, Inc.
英文描述： 0.05-3 GHz, 2 Watt GaAs HFET
中文描述： 0.05-3千兆赫，2瓦特砷化鎵異質(zhì)結(jié)場(chǎng)效應(yīng)晶體管
文件頁(yè)數(shù)： 1/4頁(yè)
文件大小： 195K
代理商： SHF-0589
Product Description
NOTRECOMMENDEDFORNEWDESGN
1
EDS-101242 Rev F
522 Almanor Ave., Sunnyvale, CA 94085
Phone: (800) SMI-MMIC
http://www.sirenza.com
The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions.
Sirenza Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are
subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Sirenza Microdevices does not
authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems.
Copyright 2002 Sirenza Microdevices, Inc. All worldwide rights reserved.
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SHF-0589
0.05-3 GHz, 2 Watt
GaAs HFET
Product Features
High Linearity Performance at 1.96 GHz
+33.4 dBm P1dB
+46.5 dBm OIP3
+26 dBm IS-95 Channel Power
+11.5 dB Gain
+23.7 dBm W-CDMA Channel Power
High Drain Efficiency (>50% at P1dB)
Applications
Analog and Digital Wireless Systems
3G, Cellular, PCS
Fixed Wireless, Pager Systems
GaAs Heterostructure FET (HFET) housed in a low-cost sur-
face-mount plastic package. The HFET technology improves
breakdown voltage while minimizing Schottky leakage current
resulting in higher PAE and improved linearity.
Output power at 1dB compression is +33.4 dBm when biased
for Class AB operation at 7V,345mA at 1.96 GHz. The +46.5
dBm third order intercept makes it ideal for high dynamic range,
high intercept point requirements. It is well suited for use in
both analog and digital wireless communication
infrastructure and subscriber equipment including 3G, cellular,
PCS, fixed wireless, and pager systems.
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[1] 100% tested - Insertion gain tested using a 50 ohm contact board (no matching circuitry) during final production test.
[2] Sample tested - Samples pulled from each wafer/package lot. Sample test specifications are based on statistical data from sample test measurements. The test fixture is
[3] Maximum recommended power dissipation is specified to maintain T
J
<140C at T
L
=85C. V
DS
* I
DQ
< 2.4W is recommended for continuous reliable operation.
Typical Gain Performance (7V,345mA)
Frequency (GHz)
Gmax
Gain
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