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參數(shù)資料
| 型號(hào)： | SHF-0289 |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | DC-3 GHz, 1.0 Watt GaAs HFET |
| 中文描述： | 的DC - 3千兆赫，1.0瓦砷化鎵異質(zhì)結(jié)場(chǎng)效應(yīng)晶體管 |
| 文件頁(yè)數(shù)： | 5/8頁(yè) |
| 文件大?。?/td> | 529K |
| 代理商： | SHF-0289 |
5
522 Almanor Ave., Sunnyvale, CA 94086
Phone: (800) SMI-MMIC
http://www.stanfordmicro.com
EDS-101241 Rev A
Preliminary
SHF-0289 DC-3GHz, 1 Watt GaAs HFET
6
9
12
15
18
1.5
1.7
1.9
2.1
2.3
-38
-35
-32
-29
-26
-30
-25
-20
-15
-10
-5
0
1.5
1.7
1.9
2.1
2.3
Frequency GHz
Frequency GHz
S
11
S
12
S
21
10
20
30
40
0
5
10
15
20
Pin (dBm)
Note: s-parameters determined using applications circuit shown above
Test Data @ 1.9 GHz
P
1dB
(dBm) IP3(dBm) Output tone Level (dBm)
30.5 46.0 15
.
d
.
R
e
V
e
b
m
u
N
t
P
1
d
C
F
p
0
2
2
s
8
1
H
C
M
M
H
O
R
8
d
C
F
p
3
3
s
8
1
H
C
M
M
H
O
R
9
d
C
F
p
0
0
0
1
s
8
1
H
C
M
M
H
O
R
4
d
C
F
p
0
0
1
s
8
1
H
C
M
M
H
O
R
0
1
d
C
F
u
1
t
v
5
3
,
A
"
,
M
U
L
A
T
N
A
T
5
d
C
F
u
0
1
t
v
5
3
,
A
"
,
M
U
L
A
T
N
A
T
1
M
C
F
p
7
s
8
1
H
C
M
M
H
O
R
2
M
C
F
p
2
s
8
1
H
C
M
M
H
O
R
1
L
H
n
0
1
T
N
0
1
H
F
-
0
6
1
L
L
O
K
O
T
2
L
H
n
2
2
T
N
2
2
H
F
-
0
6
1
L
L
O
K
O
T
1
b
a
R
s
m
h
o
1
3
0
6
0
e
2
b
a
R
s
m
h
o
0
2
3
0
6
0
e
.
d
.
R
e
V
1
Z
z
H
M
0
0
9
1
@
.
e
d
5
,
m
h
o
0
5
2
Z
z
H
M
0
0
9
1
@
.
e
d
9
1
,
m
h
o
0
5
3
Z
z
H
M
0
0
9
1
@
.
e
d
5
,
m
h
o
0
5
4
Z
z
H
M
0
0
9
1
@
.
e
d
7
2
,
m
h
o
0
5
5
Z
z
H
M
0
0
9
1
@
.
e
d
8
,
m
h
o
0
5
S
22
0
2 0
4 0
6 0
1 5
2 0
2 5
3 0
3 5
2 7 0
3 5 0
4 3 0
5 1 0
D ra in E ffic ie n c y
I
D
Pout(dBm)
P
hase shift functional block between components
are calculated based on wavelength of 1900 MHz
signal on FR4 board material with dielectric con-
stant of 4.1, microstrip width and height dimen-
sions of W=.054 inch and h= .031 inch.
P
out
vs. P
in
T=25
ο
C
P
o
S
1
,
2
S
11
& S
22
vs. Frequency T=25
o
C
S
21
& S
12
vs. Frequency T=25
o
C
E
Drain Efficiency & I
D
vs. P
out
T=25
ο
C
S
2
I
D
(
S
1.9 GHz Application Circuit at 25
°
C (Vds=8V, Idq=250mA)
Microstrip Segment Specifications
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