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參數(shù)資料
| 型號(hào)： | SHF-0186 |
| 廠(chǎng)商： | Electronic Theatre Controls, Inc. |
| 英文描述： | DC-12 GHz, 0.5 Watt AlGaAs/GaAs HFET |
| 中文描述： | 的DC - 12千兆赫，0.5瓦的AlGaAs /砷化鎵異質(zhì)結(jié)場(chǎng)效應(yīng)晶體管 |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大?。?/td> | 159K |
| 代理商： | SHF-0186 |
The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions.
Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change
without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford
Microdevices product for use in life-support devices and/or systems.
Copyright 2000 Stanford Microdevices, Inc. All worldwide rights reserved.
Phone: (800) SMI-MMIC
522 Almanor Ave., Sunnyvale, CA 94085
Preliminary
Product Description
http://www.stanfordmicro.com
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Stanford Microdevices’ SHF-0186 is a high performance GaAs
Heterostructure FET housed in a low-cost surface-mount plastic
package. HFET technology improves breakdown voltage while
minimizing Schottky leakage current for higher power added
efficiency and improved linearity.
Output power at 1dB compression for the SHF-0186 is +28
dBm when biased for Class AB operation at 8V and 100mA.
The +40 dBm third order intercept makes it ideal for high dynamic
range, high intercept point requirements. It is well suited for
use in both analog and digital wireless communication
infrastructure and subscriber equipment including cellular PCS,
CDPD, wireless data, and pagers.
SHF-0186
DC-12 GHz, 0.5 Watt
AlGaAs/GaAs HFET
Product Features
Patented AlGaAs/GaAs Heterostructure FET
Technology
+28 dBm P1dB Typical
+40 dBm Output IP3 Typical
High Drain Efficiency: Up to 46% at Class AB
17 dB Gain at 900 MHz (Application circuit)
15 dB Gain at 1900 MHz (Application circuit)
Gmax Guaranteed at 12 GHz
Applications
Analog and Digital Wireless System
Cellular PCS, CDPD, Wireless Data, Pagers
AN-020 Contains detailed application circuits
Gain vs. Frequency
Frequency (GHz)
G
M
(
S21
Gmax
V
DS
=8V, I
DQ
=100mA
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| SHF-0289 | DC-3 GHz, 1.0 Watt GaAs HFET |
| SHF-0589 | 0.05-3 GHz, 2 Watt GaAs HFET |
| SHF5110 | IR-Receiver for Remote Control Systems |
| SHF5111 | IR-Receiver for Remote Control Systems |
| SHM-12 | Ultra-Fast, 12-Bit Linear Monolithic Sample-Hold Amplifiers |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SHF-0186K | 制造商:未知廠(chǎng)家 制造商全稱(chēng):未知廠(chǎng)家 功能描述:DC-3 GHz, 0.5 Watt AlGaAs/GaAs HFET |
| SHF-0189 | 制造商:RF Micro Devices Inc 功能描述:IC HFET ALGAAS/GAAS .5W SOT-89 |
| SHF-0189Z | 制造商:SIRENZA 制造商全稱(chēng):SIRENZA 功能描述:0.05 - 6 GHz, 0.5 Watt GaAs HFET |
| SHF-0198 | 制造商:STANFORD 制造商全稱(chēng):STANFORD 功能描述:DC-12 GHz, 0.5 Watt AIGaAs/GaAs HFET |
| SHF-0289 | 制造商:RF Micro Devices Inc 功能描述:IC HFET ALGAAS/GAAS 1W SOT-89 |
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