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參數(shù)資料
| 型號： | SGW50N60HS |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | High Speed IGBT in NPT-technology |
| 中文描述： | 在不擴散核武器條約高高速IGBT的技術 |
| 文件頁數(shù)： | 7/11頁 |
| 文件大小： | 331K |
| 代理商： | SGW50N60HS |
SGW50N60HS
Power Semiconductors
7
Rev. 2.1 June 06
E
,
S
0A
20A
40A
60A
80A
0mJ
1mJ
2mJ
3mJ
4mJ
5mJ
E
on
*
E
off
*)
E
and
E
include losses
due to diode recovery
E
ts
*
E
,
S
0
3
6
9
12
15
0.0 mJ
0.5 mJ
1.0 mJ
1.5 mJ
2.0 mJ
2.5 mJ
3.0 mJ
3.5 mJ
E
on
*
*) Eon and Ets include losses
due to diode recovery
E
ts
*
E
off
I
C
,
COLLECTOR CURRENT
R
G
,
GATE RESISTOR
Figure 13. Typical switching energy losses
as a function of collector current
(inductive load,
T
J
=150°C,
V
CE
=400V, V
GE
=0/15V,
R
G
=6.8
,
Dynamic test circuit in Figure E)
Figure 14. Typical switching energy losses
as a function of gate resistor
(inductive load,
T
J
=150°C,
V
CE
=400V, V
GE
=0/15V,
I
C
=50A,
Dynamic test circuit in Figure E)
E
,
S
0°C
50°C
100°C
0mJ
1mJ
2mJ
*)
E
on
and
E
ts
include losses
due to diode recovery
E
ts
*
E
on
*
E
off
Z
t
,
T
1μs
10μs
100μs
1ms
10ms
100ms
10
-3
K/W
10
-2
K/W
10
-1
K/W
single pulse
0.01
0.02
0.05
0.1
0.2
D
=0.5
T
J
,
JUNCTION TEMPERATURE
Figure 15. Typical switching energy losses
as a function of junction
temperature
(inductive load,
V
CE
=400V,
V
GE
=0/15V,
I
C
=50A,
R
G
=6.8
,
Dynamic test circuit in Figure E)
t
P
,
PULSE WIDTH
Figure 16. IGBT transient thermal resistance
(
D = t
p
/
T
)
C
1
=
τ
1
/
R
1
R
1
R
2
C
2
=
τ
2
/
R
2
R
,(K/W )
0.116
0.0729
0.0543
0.0386
0.0173
τ
,
(s)
0.0895
2.45E-02
1.95E-03
2.07E-04
1.05E-05
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