參數(shù)資料
型號(hào)： SGW50N60HS
廠商： INFINEON TECHNOLOGIES AG
英文描述： High Speed IGBT in NPT-technology
中文描述： 在不擴(kuò)散核武器條約高高速IGBT的技術(shù)
文件頁數(shù)： 6/11頁
文件大小： 331K
代理商： SGW50N60HS
SGW50N60HS
Power Semiconductors
6
Rev. 2.1 June 06
t
S
0A
20A
40A
60A
80A
10ns
100ns
t
r
t
d(on)
t
f
t
d(off)
t
S
0
3
6
9
12
15
10 ns
100 ns
t
f
t
r
t
d(off)
t
d(on)
I
C
,
COLLECTOR CURRENT
R
G
,
GATE RESISTOR
Figure 9. Typical switching times as a
function of collector current
(inductive load,
T
J
=150°C,
V
CE
=400V, V
GE
=0/15V,
R
G
=6.8
,
Dynamic test circuit in Figure E)
Figure 10. Typical switching times as a
function of gate resistor
(inductive load,
T
J
=150°C,
V
CE
=400V, V
GE
=0/15V,
I
C
=50A,
Dynamic test circuit in Figure E)
t
S
25°C
50°C
T
J
,
JUNCTION TEMPERATURE
Figure 11. Typical switching times as a
function of junction temperature
(inductive load,
V
CE
=400V,
V
GE
=0/15V,
I
C
=50A,
R
G
=6.8
,
Dynamic test circuit in Figure E)
75°C
100°C
125°C
10ns
100ns
t
f
t
r
t
d(on)
t
d(off)
V
G
)
,
G
-
E
-50°C
0°C
50°C
100°C
150°C
1,0V
1,5V
2,0V
2,5V
3,0V
3,5V
4,0V
4,5V
5,0V
5,5V
min.
typ.
max.
T
J
,
JUNCTION TEMPERATURE
Figure 12. Gate-emitter threshold voltage as
a function of junction temperature
(
I
C
= 1mA)
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
SGW50N60HS_09 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:High Speed IGBT in NPT-technology 30% lower Eoff compared to previous generation
SGW50N60HSFKSA1 制造商:Infineon Technologies AG 功能描述:Trans IGBT Chip N-CH 600V 100A 3-Pin(3+Tab) TO-247 制造商:Infineon Technologies AG 功能描述:IGBT PRODUCTS - Rail/Tube 制造商:Infineon Technologies AG 功能描述:IGBT NPT 600V 100A 416W TO247-3
SGW50N60HSXK 制造商:Infineon Technologies 功能描述:Trans IGBT Chip N-CH 600V 100A 3-Pin(3+Tab) TO-247
SGW5N60RUF 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Short Circuit Rated IGBT
SGW5N60RUFD 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Short Circuit Rated IGBT
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