參數(shù)資料
型號(hào): SGW23N60UF
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: IGBT 晶體管
英文描述: Ultra-Fast IGBT
中文描述: 23 A, 600 V, N-CHANNEL IGBT, TO-263AB
封裝: D2PAK-3
文件頁數(shù): 8/9頁
文件大?。?/td> 563K
代理商: SGW23N60UF
Product Folder - Fairchild P/N SGW23N60UF - Discrete, High Performance IGBT
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SGW23N60UF
Discrete, High Performance IGBT
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Contents
General description
Fairchild's UF series of Insulated Gate Bipolar
Transistors (IGBTs) provides low conduction
and switching losses. The UF series is designed
for applications such as motor control and
general inverters where high speed switching is
a required feature.
Features
q
High Speed Switching
q
Low Saturation Voltage : V CE(sat) = 2.1
V @ I C = 12A
q
High Input Impedance
Applications
AC &DC Motor controls, General
Purpose Inverters, Robotics, Servo
Controls
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Datasheet
Product status/pricing/packaging
Product
Product status
Pricing*
Package type
Leads
Packing method
file:///C|/PDF/SGW23N60UF.html (1 of 2) [27-Jul-02 5:49:17 PM]
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
SGW23N60UFD 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Ultra-Fast IGBT
SGW23N60UFDTM 功能描述:IGBT 晶體管 600V/ 12A RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
SGW23N60UFTM 功能描述:IGBT 晶體管 600V/12A RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
SGW25N120 功能描述:IGBT 晶體管 FAST IGBT NPT TECH 1200V 25A RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
SGW25N120_09 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Fast IGBT in NPT-technology 40% lower Eoff compared to previous generation