參數(shù)資料
型號(hào): SGW23N60UF
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: IGBT 晶體管
英文描述: Ultra-Fast IGBT
中文描述: 23 A, 600 V, N-CHANNEL IGBT, TO-263AB
封裝: D2PAK-3
文件頁(yè)數(shù): 2/9頁(yè)
文件大小: 563K
代理商: SGW23N60UF
SGW23N60UF Rev. A1
S
G
W23N60UF
2002 Fairchild Semiconductor Corporation
Electrical Characteristics of the IGBT T
C = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
Off Characteristics
BVCES
Collector-Emitter Breakdown Voltage
VGE = 0V, IC = 250uA
600
--
V
B
VCES/
T
J
Temperature Coefficient of Breakdown
Voltage
VGE = 0V, IC = 1mA
--
0.6
--
V/
°C
ICES
Collector Cut-Off Current
VCE = VCES, VGE = 0V
--
250
uA
IGES
G-E Leakage Current
VGE = VGES, VCE = 0V
--
± 100
nA
On Characteristics
VGE(th)
G-E Threshold Voltage
IC = 12mA, VCE = VGE
3.5
4.5
6.5
V
VCE(sat)
Collector to Emitter
Saturation Voltage
IC = 12A,
VGE = 15V
--
2.1
2.6
V
IC = 23A,
VGE = 15V
--
2.6
--
V
Dynamic Characteristics
Cies
Input Capacitance
VCE = 30V, VGE = 0V,
f = 1MHz
--
720
--
pF
Coes
Output Capacitance
--
100
--
pF
Cres
Reverse Transfer Capacitance
--
25
--
pF
Switching Characteristics
td(on)
Turn-On Delay Time
VCC = 300 V, IC = 12A,
RG = 23, VGE = 15V,
Inductive Load, TC = 25°C
--
17
--
ns
tr
Rise Time
--
27
--
ns
td(off)
Turn-Off Delay Time
--
60
130
ns
tf
Fall Time
--
70
150
ns
Eon
Turn-On Switching Loss
--
115
--
uJ
Eoff
Turn-Off Switching Loss
--
135
--
uJ
Ets
Total Switching Loss
--
250
400
uJ
td(on)
Turn-On Delay Time
VCC = 300 V, IC = 12A,
RG = 23, VGE = 15V,
Inductive Load, TC = 125°C
--
23
--
ns
tr
Rise Time
--
32
--
ns
td(off)
Turn-Off Delay Time
--
100
200
ns
tf
Fall Time
--
220
250
ns
Eon
Turn-On Switching Loss
--
205
--
uJ
Eoff
Turn-Off Switching Loss
--
320
--
uJ
Ets
Total Switching Loss
--
525
800
uJ
Qg
Total Gate Charge
VCE = 300 V, IC = 12A,
VGE = 15V
--
49
80
nC
Qge
Gate-Emitter Charge
--
11
17
nC
Qgc
Gate-Collector Charge
--
14
22
nC
Le
Internal Emitter Inductance
Measured 5mm from PKG
--
7.5
--
nH
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