參數(shù)資料
型號： SGP30N60
廠商： INFINEON TECHNOLOGIES AG
英文描述： Fast IGBT in NPT-technology
中文描述： 在不擴散核武器條約快速IGBT技術(shù)
文件頁數(shù)： 7/12頁
文件大?。?/td> 425K
代理商： SGP30N60
SGP30N60,
SGB30N60
SGW30N60
7
Jul-02
E
,
S
10A
20A
30A
40A
50A
60A
70A
0.0mJ
0.5mJ
1.0mJ
1.5mJ
2.0mJ
2.5mJ
3.0mJ
3.5mJ
4.0mJ
4.5mJ
5.0mJ
E
on
*
E
off
E
ts
*
E
,
S
0
10
R
G
,
GATE RESISTOR
20
30
40
0.0mJ
0.5mJ
1.0mJ
1.5mJ
2.0mJ
2.5mJ
3.0mJ
3.5mJ
4.0mJ
E
ts
*
E
on
*
E
off
I
C
,
COLLECTOR CURRENT
Figure 13. Typical switching energy losses
as a function of collector current
(inductive load,
T
j
= 150
°
C,
V
CE
= 400V,
V
GE
= 0/+15V,
R
G
= 11
,
Dynamic test circuit in Figure E)
Figure 14. Typical switching energy losses
as a function of gate resistor
(inductive load,
T
j
= 150
°
C,
V
CE
= 400V,
V
GE
= 0/+15V,
I
C
= 30A,
Dynamic test circuit in Figure E)
E
,
S
0°C
50°C
100°C
150°C
0.0mJ
0.5mJ
1.0mJ
1.5mJ
2.0mJ
2.5mJ
3.0mJ
E
ts
*
E
on
*
E
off
Z
t
,
T
1μs
10μs
100μs
1ms
10ms 100ms
1s
10
-4
K/W
10
-3
K/W
10
-2
K/W
10
-1
K/W
10
0
K/W
0.01
0.02
0.05
0.1
0.2
single pulse
D
=0.5
T
j
,
JUNCTION TEMPERATURE
Figure 15. Typical switching energy losses
as a function of junction temperature
(inductive load,
V
CE
= 400V,
V
GE
= 0/+15V,
I
C
= 30A,
R
G
= 11
,
Dynamic test circuit in Figure E)
t
p
,
PULSE WIDTH
Figure 16. IGBT transient thermal
impedance as a function of pulse width
(
D
=
t
p
/
T
)
*)
E
on
and
E
ts
include losses
due to diode recovery.
*)
E
on
and
E
ts
include losses
due to diode recovery.
*)
E
and
E
include losses
due to diode recovery.
C
1
=
τ
1
/
R
1
R
1
R
2
C
2
=
τ
2
/
R
2
R
,(1/W )
0.3681
0.0938
0.0380
τ
,
(s)
=
0.0555
1.26*10
-3
1.49*10
-4
相關(guān)PDF資料
PDF描述
SGB30N60 Fast S-IGBT in NPT-technology( NPT 技術(shù)中的快速 S-IGBT)
SGP30N60 Fast S-IGBT in NPT-technology( NPT 技術(shù)中的快速 S-IGBT)
SGW30N60 Fast S-IGBT in NPT-technology( NPT 技術(shù)中的快速 S-IGBT)
SGD-100T C to X Band, Mixer, Modulator Applications
SGD-100 GaAs Schottky Barrier Diode（C to X Band, Mixer, Modulator Applications）(應(yīng)用于C到X帶寬，混頻器和調(diào)制器的砷化鎵肖特基勢壘二極管)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
SGP30N60 制造商:Infineon Technologies AG 功能描述:IGBT TO-220
SGP30N60_08 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Fast IGBT in NPT-technology
SGP30N60_09 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Fast IGBT in NPT-technology
SGP30N60HS 功能描述:IGBT 晶體管 HIGH SPEED NPT TECH 600V 30A RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
SGP30N60HS_09 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:High Speed IGBT in NPT-technology 30% lower Eoff compared to previous generation
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