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參數(shù)資料
| 型號： | SGP20N60HS |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | High Speed IGBT in NPT-technology |
| 中文描述： | 在不擴散核武器條約高高速IGBT的技術(shù) |
| 文件頁數(shù)： | 3/12頁 |
| 文件大?。?/td> | 429K |
| 代理商： | SGP20N60HS |
SGP20N60HS
SGW20N60HS
Power Semiconductors
3
Rev.2 Aug-02
Switching Characteristic, Inductive Load,
at
T
j
=25
°
C
Value
typ.
Parameter
Symbol
Conditions
min.
max.
Unit
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
-
-
-
-
-
-
-
18
15
207
13
0.39
0.30
0.69
ns
T
j
=25
°
C,
V
CC
=400V,
I
C
=20A,
V
GE
=0/15V,
R
G
=16
L
σ
C
σ
Energy losses include
“tail” and diode
reverse recovery.
1)
=60nH,
1)
=40pF
mJ
Switching Characteristic, Inductive Load,
at
T
j
=150
°
C
Value
typ.
Parameter
Symbol
Conditions
min.
max.
Unit
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
-
-
-
-
-
-
-
15
8.5
65
35
0.46
0.24
0.7
ns
T
j
=150
°
C
V
CC
=400V,
I
C
=20A,
V
GE
=0/15V,
R
G
= 2.2
L
σ
C
σ
Energy losses include
“tail” and diode
reverse recovery.
1)
=60nH,
1)
=40pF
mJ
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
-
-
-
-
-
-
-
17
13
222
13
0.6
0.36
0.96
ns
T
j
=150
°
C
V
CC
=400V,
I
C
=20A,
V
GE
=0/15V,
R
G
= 16
L
σ
C
σ
Energy losses include
“tail” and diode
reverse recovery.
1)
=60nH,
1)
=40pF
mJ
1)
Leakage inductance
L
σ
and Stray capacity
C
σ
due to test circuit in Figure E.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SGP20N60HS_09 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:High Speed IGBT in NPT-technology 30% lower Eoff compared to previous generation |
| SGP20N60HSXKSA1 | 制造商:Infineon Technologies AG 功能描述:Trans IGBT Chip N-CH 600V 36A 3-Pin(3+Tab) TO-220 制造商:Infineon Technologies AG 功能描述:IGBT PRODUCTS - Rail/Tube 制造商:Infineon Technologies AG 功能描述:IGBT 600V 20A 178W TO220-3 |
| SGP20N60RUF | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Short Circuit Rated IGBT |
| SGP20N60RUFTU | 功能描述:IGBT 晶體管 RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| SGP20N60XKSA1 | 制造商:Infineon Technologies AG 功能描述:Trans IGBT Chip N-CH 600V 40A 3-Pin(3+Tab) TO-220AB 制造商:Infineon Technologies AG 功能描述:IGBT PRODUCTS - Rail/Tube 制造商:Infineon Technologies AG 功能描述:IGBT NPT 600V 40A 179W TO220-3 |
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