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參數(shù)資料
| 型號(hào)： | SGP07N120 |
| 廠商： | SIEMENS AG |
| 英文描述： | Fast S-IGBT in NPT-technology( NPT技術(shù)中的快速S-IGBT) |
| 中文描述： | 快速的S -不擴(kuò)散核武器條約IGBT的技術(shù)（不擴(kuò)散技術(shù)中的快速第S - IGBT的） |
| 文件頁(yè)數(shù)： | 2/11頁(yè) |
| 文件大?。?/td> | 374K |
| 代理商： | SGP07N120 |
Preliminary
SGP07N120
SGB07N120
Power Semiconductors
2
Mar-00
Thermal Resistance
Parameter
Symbol
Conditions
Max. Value
Unit
Characteristic
IGBT thermal resistance,
junction – case
Thermal resistance,
junction – ambient
SMD version, device on PCB
1)
R
thJC
1
R
thJA
TO-220AB
62
R
thJA
TO-263AB(D2PAK)
40
K/W
Electrical Characteristic,
at
T
j
= 25
°
C, unless otherwise specified
Value
typ.
Parameter
Symbol
Conditions
min.
max.
Unit
Static Characteristic
Collector-emitter breakdown voltage
V
(BR)CES
V
CE(sat)
V
GE
=0V,
I
C
=500
μ
A
V
GE
= 15V,
I
C
=8A
T
j
=25
°
C
T
j
=150
°
C
I
C
=350
μ
A,
V
CE
=
V
GE
V
CE
=1200V,V
GE
=0V
T
j
=25
°
C
T
j
=150
°
C
V
CE
=1200V,
V
GE
=0V
V
CE
=20V,
I
C
=8A
1200
-
-
Collector-emitter saturation voltage
2.5
-
3.1
3.7
3.6
4.3
Gate-emitter threshold voltage
V
GE(th)
I
CES
3
4
5
V
Zero gate voltage collector current
-
-
-
-
100
400
μ
A
Gate-emitter leakage current
Transconductance
Dynamic Characteristic
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
I
GES
g
fs
-
-
6
100
-
nA
S
C
iss
C
oss
C
rss
Q
Gate
-
-
-
-
720
90
50
70
870
110
60
90
V
CE
=25V,
V
GE
=0V,
f
=1MHz
pF
V
CC
=960V,
I
C
=8A
V
GE
=15V
TO-220AB
nC
Internal emitter inductance
measured 5mm (0.197 in.) from case
Short circuit collector current
2)
L
E
-
7
-
nH
I
C(SC)
V
GE
=15V,
t
SC
≤
10
μ
s
100V
≤
V
CC
≤
1200V,
T
j
≤
150
°
C
-
75
-
A
1)
Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm
2
(one layer, 70
μ
m thick) copper area for
collector connection. PCB is vertical without blown air.
2)
Allowed number of short circuits: <1000; time between short circuits: >1s.
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參數(shù)描述 |
|---|---|
| SGP07N120XKSA1 | 制造商:Infineon Technologies AG 功能描述:Trans IGBT Chip N-CH 1.2KV 16.5A 3-Pin(3+Tab) TO-220AB 制造商:Infineon Technologies AG 功能描述:IGBT PRODUCTS - Rail/Tube 制造商:Infineon Technologies AG 功能描述:IGBT NPT 1200V 16.5A 125W TO220 |
| SGP100 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Primary-side-control PWM Controller |
| SGP100SZ | 功能描述:開(kāi)關(guān)變換器、穩(wěn)壓器與控制器 Primary-side-control PWM controller RoHS:否 制造商:Texas Instruments 輸出電壓:1.2 V to 10 V 輸出電流:300 mA 輸出功率: 輸入電壓:3 V to 17 V 開(kāi)關(guān)頻率:1 MHz 工作溫度范圍: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:WSON-8 封裝:Reel |
| SGP101SZ | 制造商:Fairchild Semiconductor Corporation 功能描述: |
| SGP10N60 | 功能描述:IGBT 晶體管 FAST IGBT NPT TECH 600V 10A RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
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