參數(shù)資料
型號(hào)： SGP02N60
廠商： INFINEON TECHNOLOGIES AG
英文描述： FAST IGBT IN NPT TECHNOLOGY
中文描述： 快速I(mǎi)GBT技術(shù)在不擴(kuò)散核武器條約
文件頁(yè)數(shù)： 6/13頁(yè)
文件大?。?/td> 389K
代理商： SGP02N60
Preliminary
SGP02N120
SGB02N120, SGD02N120
Power Semiconductors
6
Mar-00
t
,
S
0A
2A
4A
6A
8A
10ns
100ns
t
r
t
d(on)
t
f
t
d(off)
t
,
S
0
50
100
150
10ns
100ns
t
r
t
d(on)
t
f
t
d(off)
I
C
,
COLLECTOR CURRENT
Figure 9. Typical switching times as a
function of collector current
(inductive load,
T
j
= 150
°
C,
V
CE
= 800V,
V
GE
= +15V/0V,
R
G
= 91
)
R
G
,
GATE RESISTOR
Figure 10. Typical switching times as a
function of gate resistor
(inductive load,
T
j
= 150
°
C,
V
CE
= 800V,
V
GE
= +15V/0V,
I
C
= 2A)
t
,
S
-50°C
0°C
50°C
100°C
150°C
10ns
100ns
t
r
t
d(on)
t
f
t
d(off)
V
G
,
G
-
E
-50°C
0°C
50°C
100°C
150°C
0V
1V
2V
3V
4V
5V
6V
typ.
min.
max.
T
j
,
JUNCTION TEMPERATURE
Figure 11. Typical switching times as a
function of junction temperature
(inductive load,
V
CE
= 800V,
V
GE
= +15V/0V,
I
C
= 2A,
R
G
= 91
)
T
j
,
JUNCTION TEMPERATURE
Figure 12. Gate-emitter threshold voltage
as a function of junction temperature
(
I
C
= 0.3mA)
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參數(shù)描述
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