參數(shù)資料
型號(hào)： SGH23N60UFD
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： IGBT 晶體管
英文描述： Ultra-Fast IGBT
中文描述： 23 A, 600 V, N-CHANNEL IGBT
封裝： TO-3P, 3 PIN
文件頁數(shù)： 1/7頁
文件大?。?/td> 627K
代理商： SGH23N60UFD
2000 Fairchild Semiconductor International
September 2000
SGH23N60UFD Rev. A
IGBT
S
G
H23N60UFD
SGH23N60UFD
Ultra-Fast IGBT
General Description
Fairchild's Insulated Gate Bipolar Transistor(IGBT) UFD
series provides low conduction and switching losses.
UFD series is designed for the applications such as motor
control and general inverters where High Speed Switching
is required.
Features
High Speed Switching
Low Saturation Voltage : VCE(sat) = 2.1 V @ IC = 12A
High Input Impedance
CO-PAK, IGBT with FRD : trr = 42ns (typ.)
Absolute Maximum Ratings T
C = 25°C unless otherwise noted
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
Description
SGH23N60UFD
Units
VCES
Collector-Emitter Voltage
600
V
VGES
Gate-Emitter Voltage
± 20
V
IC
Collector Current
@ TC = 25°C23
A
Collector Current
@ TC = 100°C12
A
ICM (1)
Pulsed Collector Current
92
A
IF
Diode Continuous Forward Current
@ TC = 100°C12
A
IFM
Diode Maximum Forward Current
92
A
PD
Maximum Power Dissipation
@ TC = 25°C
100
W
Maximum Power Dissipation
@ TC = 100°C40
W
TJ
Operating Junction Temperature
-55 to +150
°C
Tstg
Storage Temperature Range
-55 to +150
°C
TL
Maximum Lead Temp. for Soldering
Purposes, 1/8” from Case for 5 Seconds
300
°C
Symbol
Parameter
Typ.
Max.
Units
RθJC(IGBT)
Thermal Resistance, Junction-to-Case
--
1.2
°C/W
RθJC(DIODE)
Thermal Resistance, Junction-to-Case
--
2.5
°C/W
RθJA
Thermal Resistance, Junction-to-Ambient
--
40
°C/W
Application
AC & DC Motor controls, General Purpose Inverters, Robotics, Servo Controls
G C E
TO-3P
G
C
E
G
C
E
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
SGH23N60UFDTU 功能描述:IGBT 晶體管 Dis High Perf IGBT RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
SGH23N60UFTU 功能描述:IGBT 晶體管 RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
SGH25N120 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Short Circuit Rated IGBT
SGH25N120RUF 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Short Circuit Rated IGBT
SGH25N120RUFTU 功能描述:IGBT 晶體管 RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
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