參數(shù)資料
型號: SGB15N60HS
廠商: INFINEON TECHNOLOGIES AG
英文描述: High Speed IGBT in NPT-technology
中文描述: 在不擴散核武器條約高高速IGBT的技術(shù)
文件頁數(shù): 7/11頁
文件大小: 325K
代理商: SGB15N60HS
^
SGB15N60HS
Power Semiconductors
7
Rev 2.1 Jan 05
E
,
S
0A
10A
20A
30A
0,0mJ
1,0mJ
2,0mJ
E
ts
*
E
off
*)
E
on
include losses
due to diode recovery
E
on
*
E
,
S
0
10
R
G
,
GATE RESISTOR
20
30
40
0,0 mJ
0,5 mJ
1,0 mJ
E
ts
*
E
on
*
*) Eon include losses
due to diode recovery
E
off
I
C
,
COLLECTOR CURRENT
Figure 13. Typical switching energy losses
as a function of collector current
(inductive load,
T
J
=150°C,
V
CE
=400V, V
GE
=0/15V,
R
G
=23
,
Dynamic test circuit in Figure E)
Figure 14. Typical switching energy losses
as a function of gate resistor
(inductive load,
T
J
=150°C,
V
CE
=400V, V
GE
=0/15V,
I
C
=15A,
Dynamic test circuit in Figure E)
E
,
S
0°C
50°C
100°C
150°C
0.00mJ
0.25mJ
0.50mJ
0.75mJ
E
ts
*
E
on
*
*)
E
on
include losses
due to diode recovery
E
off
Z
t
,
T
1μs
10μs
100μs
1ms
10ms
100ms
1s
10
-4
K/W
10
-3
K/W
10
-2
K/W
10
-1
K/W
10
0
K/W
0.01
0.02
0.05
0.1
0.2
single pulse
D
=0.5
T
J
,
JUNCTION TEMPERATURE
Figure 15. Typical switching energy losses
as a function of junction
temperature
(inductive load,
V
CE
=400V,
V
GE
=0/15V,
I
C
=20A,
R
G
=23
,
Dynamic test circuit in Figure E)
t
P
,
PULSE WIDTH
Figure 16. IGBT transient thermal resistance
(
D = t
p
/
T
)
C
1
=
τ
1
/
R
1
R
1
R
2
C
2
=
τ
2
/
R
2
R
,(1/W )
0.5321
0.2047
0.1304
0.0027
τ
,
(s)
0.04968
2.58*10
-3
2.54*10
-4
3.06*10
-4
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