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參數(shù)資料
| 型號： | SGB15N60HS |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | High Speed IGBT in NPT-technology |
| 中文描述： | 在不擴散核武器條約高高速IGBT的技術 |
| 文件頁數(shù)： | 2/11頁 |
| 文件大?。?/td> | 325K |
| 代理商： | SGB15N60HS |
^
Thermal Resistance
SGB15N60HS
Power Semiconductors
2
Rev 2.1 Jan 05
Parameter
Symbol
Conditions
Max. Value
Unit
Characteristic
IGBT thermal resistance,
junction – case
Thermal resistance,
junction – ambient
SMD version, device on PCB
1)
Electrical Characteristic,
at
T
j
= 25
°
C, unless otherwise specified
R
thJC
0.9
R
thJA
62
K/W
R
thJA
40
Value
Typ.
Parameter
Symbol
Conditions
min.
max.
Unit
Static Characteristic
Collector-emitter breakdown voltage
V
(BR)CES
V
CE(sat)
V
GE
=0V,
I
C
=500
μ
A
V
GE
= 15V,
I
C
=15A
T
j
=25
°
C
T
j
=150
°
C
I
C
=400
μ
A,
V
CE
=
V
GE
V
CE
=600V,
V
GE
=0V
T
j
=25
°
C
T
j
=150
°
C
V
CE
=0V,
V
GE
=20V
V
CE
=20V,
I
C
=15A
600
-
-
Collector-emitter saturation voltage
2.8
3.5
3.15
4.00
Gate-emitter threshold voltage
V
GE(th)
I
CES
3
4
5
V
Zero gate voltage collector current
-
-
-
-
40
2000
μ
A
Gate-emitter leakage current
Transconductance
Dynamic Characteristic
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
I
GES
g
fs
-
-
-
100
nA
S
10
C
iss
C
oss
C
rss
Q
Gate
-
-
-
-
810
83
51
80
V
CE
=25V,
V
GE
=0V,
f
=1MHz
pF
V
CC
=480V,
I
C
=15A
V
GE
=15V
nC
Internal emitter inductance
measured 5mm (0.197 in.) from case
Short circuit collector current
2)
L
E
-
7
nH
I
C(SC)
V
GE
=15V,
t
SC
≤
10
μ
s
V
CC
≤
400V,
T
j
≤
150
°
C
-
135
A
1)
Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm
2
(one layer, 70
μ
m thick) copper area for
collector connection. PCB is vertical without blown air.
2)
Allowed number of short circuits: <1000; time between short circuits: >1s.
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| SGB15N60HS_06 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:High Speed IGBT in NPT-technology |
| SGB15N60HSATMA1 | 制造商:Infineon Technologies AG 功能描述:Trans IGBT Chip N-CH 600V 27A 3-Pin(2+Tab) TO-263 制造商:Infineon Technologies AG 功能描述:IGBT PRODUCTS - Tape and Reel 制造商:Infineon Technologies AG 功能描述:IGBT NPT 600V 27A 138W TO263-3 |
| SGB15N60HSATMA2 | 制造商:Infineon Technologies AG 功能描述:Trans IGBT Chip N-CH 600V 27A 制造商:Infineon Technologies AG 功能描述:IGBT PRODUCTS - Tape and Reel |
| SGB15UF | 制造商:SSDI 制造商全稱:Solid States Devices, Inc 功能描述:60 mA 1000 - 3500 VOLTS 60 nsec HIGH VOLTAGE RECTIFIER |
| SGB15UFSMS | 制造商:SSDI 制造商全稱:Solid States Devices, Inc 功能描述:60 mAMP 1000-3500 VOLTS 60 nsec HIGH VOLTAGE RECTIFIER |
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