參數(shù)資料
型號(hào): SGB02N120
廠商: INFINEON TECHNOLOGIES AG
英文描述: Fast S-IGBT in NPT-technology
中文描述: 快速的S -不擴(kuò)散核武器條約IGBT的技術(shù)
文件頁數(shù): 11/13頁
文件大?。?/td> 389K
代理商: SGB02N120
Preliminary
SGP02N120
SGB02N120, SGD02N120
Power Semiconductors
11
Mar-00
Figure A. Definition of switching times
I
r r m
90%
I
r r m
10%
I
r r m
di
/dt
r r
di /dt
t
r r
I
F
i,v
t
Q
S
Q
F
t
S
t
F
V
R
Q =Q
Q
S
F
+
t =t
t
S
F
+
Figure C. Definition of diodes
switching characteristics
p(t)
1
2
n
T (t)
τ
1
r
1
τ
2
r
2
n
n
τ
r
T
C
r
r
r
Figure D. Thermal equivalent
circuit
Figure B. Definition of switching losses
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
SGB02N120_07 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Fast IGBT in NPT-technology Lower Eoff compared to previous generation
SGB02N120ATMA1 制造商:Infineon Technologies AG 功能描述:Trans IGBT Chip N-CH 1.2KV 6.2A 3-Pin(2+Tab) TO-263 T/R 制造商:Infineon Technologies AG 功能描述:IGBT PRODUCTS - Tape and Reel 制造商:Infineon Technologies AG 功能描述:IGBT NPT 1200V 6.2A 62W TO263-3
SGB02N60 功能描述:IGBT 晶體管 FAST IGBT NPT TECH 600V 2A RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
SGB02N60_06 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation
SGB02N60ATMA1 制造商:Infineon Technologies AG 功能描述:Trans IGBT Chip N-CH 600V 6A 3-Pin(2+Tab) TO-263 制造商:Infineon Technologies AG 功能描述:IGBT PRODUCTS - Tape and Reel 制造商:Infineon Technologies AG 功能描述:IGBT NPT 600V 6A 30W TO263-3