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PreliminaryThe information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or ommisions.
Sirenza Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without
notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product
for use in life-support devices and/or systems.
Copyright 2002 Sirenza Microdevices, Inc. All worldwide rights reserved.
303 South Technology Court, Broomfield, CO 80021
Phone: (800) SMI-MMIC
1
http://www.sirenza.com
EDS-103079 Rev C
Preliminary Data Sheet
Sirenza Microdevices’ SGB-2233 is a high performance
SiGe HBT MMIC amplifier utilizing a Darlington configura-
tion with an active bias network. The active bias network
provides stable current over temperature and process Beta
variations. Designed to run directly from a 3V to 5V supply
the SGB-2233 does not require a drop resistor as com-
pared to typical Darlington amplifiers. This robust amplifier
features a Class 1C ESD rating, low thermal resistance ,
and unconditional stability. The SGB-2233 product is
designed for high linearity 3V gain block applications that
require small size and minimal external components. It is
on chip matched to 50 ohm and an external bias inductor
choke is required for the application band.
Functional Block Diagram
Key Specifications
Symbol
Parameters: Test Conditions
Z
0
= 50
, V
CC
= 3.0V, Ic = 25mA, T
= 30oC)
Frequency of Operation
Unit
Min.
Typ.
Max.
f
O
MHz
DC
4500
S
21
Small Signal Gain – 850MHz
dB
13.9
Small Signal Gain – 1950MHz
11.4
12.9
14.4
Small Signal Gain – 2400MHz
12.5
P
1dB
Output Power at 1dB Compression – 850MHz
dBm
7.9
Output Power at 1dB Compression – 1950MHz
5.2
6.7
Output Power at 1dB Compression – 2400MHz
6.4
OIP3
Output IP3 – 850MHz
20.5
Output IP3 – 1950MHz
dB
16.5
19.0
Output IP3 – 2400MHz
19.0
IRL
Input Return Loss @ 1950MHz
dB
13.5
19.5
ORL
Output Return Loss@ 1950MHz
dB
12.7
16.7
Ic
Current
mA
21
25
29
NF
Noise Figure @1950MHz
dB
4.2
5.2
R
th, j-l
Thermal Resistance (junction - lead)
oC/W
110
SGB-2233
DC–4.5GHz Active Bias Gain Block
Product Features
High reliability SiGe HBT Technology
Robust Class 1C ESD
Simple and small size
P1dB = 6.7 dBm @ 1950MHz
IP3 = 19.0 dBm @ 1950MHz
Low Thermal Resistance = 110 C/W
Applications
3V Battery operated applications
LO buffer amp
RF pre-driver and RF receive path
Product Description
V
NC
NC
G
N
NC
NC
V
N
N
NC
RFIN
NC
RFOUT
N
N
Active
Bias