參數(shù)資料
型號(hào): SGA-9189
廠商: Stanford Microdevices
英文描述: Reliability Qualification Report
中文描述: 可靠性鑒定報(bào)告
文件頁(yè)數(shù): 2/4頁(yè)
文件大?。?/td> 157K
代理商: SGA-9189
SGA-9189 SiGe HBT Amplifier
2
EDS-101497 Rev B
522 Almanor Ave., Sunnyvale, CA 94085
Phone: (800) SMI-MMIC
http://www.sirenza.com
Preliminary
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Absolute Maximum Ratings
MTTF is inversely proportional to the device junction
temperature. For junction temperature and MTTF
considerations the device operating conditions
should also satisfy the following expression:
P
DC
- P
OUT
< (T
J
- T
L
) / R
TH
where:
P
DC
= I
* V
(W)
P
OUT
= RF Output Power (W)
T
J
T
L
= Lead Temperature (pin 4) (C)
R
TH
= Thermal Resistance (C/W)
Typical Performance - Engineering Application Circuits (See AN-021)
Data above represents typical performance of the application circuits noted in Application Note AN-021.
Refer to the application note for additional RF data, PCB layouts, and BOMs for each application circuit. The
application note also includes biasing instructions and other key issues to be considered. For the latest
application notes please visit our site at www.sirenza.com or call your local sales representative.
Z
SOPT
E
B
C
Z
LOPT
1
P
OUT
= +10 dBm per tone for V
CE
=5V, 1 MHz tone spacing
2
P
OUT
= +6 dBm per tone for V
CE
=3V, 1 MHz tone spacing
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