- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄374782 > SGA-9189 (Stanford Microdevices) Reliability Qualification Report PDF資料下載
參數(shù)資料
| 型號： | SGA-9189 |
| 廠商： | Stanford Microdevices |
| 英文描述： | Reliability Qualification Report |
| 中文描述： | 可靠性鑒定報告 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 157K |
| 代理商： | SGA-9189 |
Preliminary
Product Description
1
EDS-101497 Rev B
522 Almanor Ave., Sunnyvale, CA 94085
Phone: (800) SMI-MMIC
http://www.sirenza.com
The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions.
Sirenza Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are
subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Sirenza Microdevices does not
authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems.
Copyright 2001 Sirenza Microdevices, Inc. All worldwide rights reserved.
SGA-9189
Silicon Germanium HBT Amplifier
Product Features
DC-3 GHz Operation
39 dBm Ouput IP3 Typical at 1.96 GHz
12 dB Gain Typical at 1.96 GHz
26 dBm P1dB Typical at 1.96 GHz
2.5 dB NF Typical at 0.9 GHz
Cost Effective
3-5 V Operation
Applications
Wireless Infrastructure Driver Amplifiers
CATV Amplifiers
Wireless Data, WLL Amplifiers
AN-021 contains detailed application circuits
Sirenza Microdevices’ SGA-9189 is a high performance
amplifier designed for operation from DC to 3 GHz.
With optimal matching at 2 GHz, OIP3=39 dBm and
P1dB=26 dBm. This RF device uses the latest Silicon
Germanium Heterostructure Bipolar Transistor (SiGe HBT)
process. The SGA-9189 is cost-effective for applications
requiring high linearity even at moderate biasing levels.
It is well suited for operation at both 5V and 3V.
l
o
b
m
y
S
C
h
t
o
5
o
2
s
=
s
T
e
n
,
u
(
c
m
0
e
a
r
1
=
a
h
C
I
V
e
5
c
e
D
V
E
C
=
Q
C
)
d
e
o
n
e
s
w
r
e
A
8
y
d
c
n
e
e
e
T
T
e
p
m
u
q
e
%
r
F
0
0
a
t
e
T
]
]
1
S
d
e
e
s
n
U
.
n
M
.
p
y
T
.
a
M
G
X
A
M
n
G
e
a
v
L
*
A
=
m
Z
u
m
,
i
a
=
M
Z
S
Z
S
L
Z
z
H
H
M
M
0
0
6
0
9
9
1
=
=
f
f
z
B
d
5
2
2
1
G
n
G
,
r
w
=
o
P
Z
S
Z
T
P
O
S
Z
L
Z
=
T
P
O
L
]
]
z
H
M
z
H
M
0
0
6
0
9
9
1
=
=
f
f
B
d
8
1
1
1
B
d
1
P
t
P
n
o
s
e
m
o
C
=
B
Z
d
,
1
t
p
O
Z
S
Z
=
T
P
O
S
L
Z
T
P
O
L
z
H
H
M
M
0
0
6
0
9
9
1
=
=
f
f
]
z
m
B
d
3
2
6
2
P
O
3
t
P
d
3
t
e
+
=
c
d
O
L
Z
=
T
P
O
L
d
T
,
t
p
O
Z
S
Z
=
T
P
O
S
Z
P
,
T
U
O
e
n
o
p
m
B
1
z
H
H
M
M
0
0
6
0
9
9
1
=
=
f
f
]
z
m
B
d
8
3
9
3
F
N
e
Z
g
e
s
N
Z
S
Z
=
T
P
O
S
,
L
Z
=
T
P
O
L
z
H
H
M
M
0
0
6
0
9
9
1
=
=
f
f
z
B
d
5
9
V
B
O
E
C
e
g
a
V
n
w
o
d
k
a
e
B
r
m
E
-
r
e
C
V
5
5
h
E
F
n
g
t
e
c
C
D
0
2
1
0
8
1
0
0
3
h
R
)
a
e
o
n
u
e
c
n
a
e
R
l
m
r
h
T
W
/
C
o
7
4
V
E
C
)
m
e
e
c
e
g
a
V
g
n
p
O
e
c
e
D
V
5
I
E
C
)
m
e
e
c
e
C
g
n
p
O
e
c
e
D
A
m
0
9
1
5
7
9
11
13
15
17
19
21
23
25
0.9 1.1 1.3 1.5 1.7 1.9 2.1 2.3 2.5
Frequency (GHz)
24
26
28
30
32
34
36
38
40
42
44
Typical Gmax, OIP3, P1dB @ 5V,180mA
G
O
Gmax
OIP3
P1dB
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| SGB-2233 | DC-4.5GHz Active Bias Gain Block |
| SGB-4533 | DC - 3 GHz Active Bias Gain Block |
| SGB-6433 | DC-3.5 GHz Active Bias Gain Block |
| SGB02N120 | Fast S-IGBT in NPT-technology( NPT技術(shù)中的快速S-IGBT) |
| SGD02N120 | Fast S-IGBT in NPT-technology( NPT技術(shù)中的快速S-IGBT) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SGA-9189Z | 制造商:RF Micro Devices Inc 功能描述:IC AMP HBT SIGE 3GHZ SOT-89 |
| SGA-9289 | 制造商:RF Micro Devices Inc 功能描述:IC AMP HBT SIGE 3GHZ SOT-89 |
| SGA-9289Z | 制造商:RF Micro Devices Inc 功能描述:IC AMP HBT SIGE 3GHZ SOT-89 |
| SG-AA3TC91-FREQ | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:HF/UHF SMD TCVCXO |
| SG-AA3TC92-FREQ | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:HF/UHF SMD TCVCXO |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。