參數(shù)資料
型號: SFW12955
廠商: Fairchild Semiconductor Corporation
英文描述: Advanced Power MOSFET
中文描述: 先進的功率MOSFET
文件頁數(shù): 1/7頁
文件大小: 248K
代理商: SFW12955
Avalanche Rugged Technology
Rugged Gate Oxide Technology
Lower Input Capacitance
Improved Gate Charge
Extended Safe Operating Area
175
oC Operating Temperature
Lower Leakage Current : 10
A (Max.) @ V
DS = -60V
Low R
DS(ON) : 0.22 (Typ.)
Advanced Power MOSFET
Thermal Resistance
Junction-to-Case
Junction-to-Ambient
RθJC
RθJA
oC/W
Characteristic
Max.
Units
Symbol
Typ.
FEATURES
D2-PAK
1. Gate 2. Drain 3. Source
1
3
2
1
2
3
I2-PAK
*
* When mounted on the minimum pad size recommended (PCB Mount).
Absolute Maximum Ratings
Drain-to-Source Voltage
Continuous Drain Current (T
C=25
oC)
Continuous Drain Current (T
C=100
oC)
Drain Current-Pulsed
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation (T
A=25
oC)
Total Power Dissipation (T
C=25
oC)
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8” from case for 5-seconds
Characteristic
Value
Units
Symbol
I
DM
V
GS
E
AS
I
AR
E
AR
dv/dt
P
D
I
D
T
J , TSTG
T
L
A
V
mJ
A
mJ
V/ns
W
W/
oC
A
oC
V
DSS
V
*
O
1
O
2
O
3
O
1
O
1
SFW/I2955
BV
DSS = -60 V
R
DS(on) = 0.3
I
D = -9.4 A
-60
-9.4
-6.6
-38
151
-9.4
4.9
-5.5
3.8
49
0.33
- 55 to +175
300
3.06
40
62.5
--
20
+
_
1999 Fairchild Semiconductor Corporation
Rev. B
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