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參數(shù)資料
| 型號： | SF5G42-8L |
| 廠商： | Toshiba Corporation |
| 英文描述： | SILICON PLANAR TYPE (MEDIUM POWER CONTROL APPLICATIONS) |
| 中文描述： | 硅平面型（中型電源控制應(yīng)用） |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 270K |
| 代理商： | SF5G42-8L |
SF5G42,SF5J42
2001-07-10
1
TOSHIBA THYRISITOR SILICON PLANAR TYPE
SF5G42,SF5J42
MEDIUM POWER CONTROL APPLICATIONS
Repetitive Peak Off
State Voltage : V
DRM
= 400, 600V
Repetitive Peak Reverse Voltage
Average On
State Current
JEDEC TO
220AB Package.
MAXIMUM RATINGS
: V
RRM
= 400, 600V
: I
T(AV)
= 5A
CHARACTERISTIC
SYMBOL
RATING
UNIT
SF5G42
400
Repetitive Peak
Off
State Voltage and
Repetitive Peak
Reverse Voltage
(RGK = 330
)
SF5J42
V
DRM
V
RRM
600
V
SF5G42
500
Non
Repetitive Peak
Reverse Voltage
(Non
Repetitive<5ms,
Tj = 0~125°C,
RGK = 330
)
SF5J42
V
RSM
720
V
Average On
State Current
(Half Sine Waveform Tc = 91°C)
I
T (AV)
5
A
R.M.S On
State Current
I
T (RMS)
7.8
A
80 (50Hz)
Peak One Cycle Surge On
State
Current (Non
Repetitive)
I
TSM
88 (60Hz)
A
I
2
t Limit Value
I
2
t
32
A
2
s
Peak Gate Power Dissipation
P
GM
0.5
W
Average Gate Power Dissipation
P
G (AV)
0.05
W
Peak Forward Gate Voltage
V
FGM
5
V
Peak Reverse Gate Voltage
V
RGM
5
V
Peak Forward Gate Current
I
GM
200
mA
Junction Temperature
T
j
40~125
°C
Storage Temperature Range
T
stg
40~125
°C
Note:
Should be used with gate resistance as follows.
Unit: mm
TO
220AB
―
13
10G1B
JEDEC
JEITA
TOSHIBA
Weight: 2g
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