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參數(shù)資料
| 型號(hào)： | SEMH9 |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | NPN Silicon Digital Transistor Array Preliminary data |
| 中文描述： | NPN硅數(shù)字晶體管陣列的初步數(shù)據(jù) |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大?。?/td> | 143K |
| 代理商： | SEMH9 |
SEMH9
Feb-09-2004
1
NPN Silicon Digital Transistor Array
Preliminary data
Switching circuit, inverter, interface circuit,
driver circuit
Two ( galvanic) internal isolated Transistors
with good matching in one package
Built in bias resistor (
R
1
=10k
,
R
2
=47k
)
1
3
6
5
4
2
EHA07174
6
5
4
3
2
1
C1
B2
E2
C2
B1
E1
1
R
R
2
R
1
R
2
TR1
TR2
Type
SEMH9
Marking
WJ
Pin Configuration
Package
1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT666
Maximum Ratings
Parameter
Collector-emitter voltage
Symbol
V
CEO
V
CBO
V
EBO
V
i(on)
I
C
P
tot
T
j
T
stg
Value
50
Unit
V
Collector-base voltage
50
Emitter-base voltage
6
Input on Voltage
20
DC collector current
100
250
mA
mW
Total power dissipation
,
T
S
= 75 °C
Junction temperature
150
°C
Storage temperature
-65 ... 150
Thermal Resistance
Junction - soldering point
1)
R
thJS
≤
300
K/W
1For calculation of
R
thJA
please refer to Application Note Thermal Resistance
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