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參數(shù)資料
| 型號： | SEMB10 |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | PNP Silicon Digital Transistor Array Preliminary data |
| 中文描述： | 進步黨硅數(shù)字晶體管陣列的初步數(shù)據(jù) |
| 文件頁數(shù)： | 2/4頁 |
| 文件大小： | 143K |
| 代理商： | SEMB10 |
SEMB10
Mar-01-2004
2
Electrical Characteristics
at
T
A
=25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
DC Characteristics
Collector-emitter breakdown voltage
I
C
= 100 μA,
I
B
= 0
Collector-base breakdown voltage
I
C
= 10 μA,
I
E
= 0
Collector cutoff current
V
CB
= 40 V,
I
E
= 0
Emitter cutoff current
V
EB
= 5 V,
I
C
= 0
DC current gain 1)
I
C
= 5 mA,
V
CE
= 5 V
Collector-emitter saturation voltage1)
I
C
= 10 mA,
I
B
= 0.5 mA
Input off voltage
I
C
= 100 μA,
V
CE
= 5 V
Input on Voltage
I
C
= 2 mA,
V
CE
= 0.3 V
Input resistor
V
(BR)CEO
50
-
-
V
V
(BR)CBO
50
-
-
I
CBO
-
-
100
nA
I
EBO
-
-
164
μA
h
FE
70
-
-
-
V
CEsat
-
-
0.3
V
V
i(off)
0.4
-
0.8
V
i(on)
0.5
-
1.1
R
1
R
1
/
R
2
1.5
2.2
2.9
k
Resistor ratio
0.042
0.047
0.052 -
AC Characteristics
Transition frequency
I
C
= 10 mA,
V
CE
= 5 V,
f
= 100 MHz
Collector-base capacitance
V
CB
= 10 V,
f
= 1 MHz
f
T
-
200
-
MHz
C
cb
-
3
-
pF
1) Pulse test: t < 300
μ
s; D < 2%
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PDF描述 |
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| SEMB11 | PNP Silicon Digital Transistor Array Preliminary data |
| SEMB1 | PNP Silicon Digital Transistor Array Preliminary data |
| SEMD9 | NPN/PNP Silicon Digital Transistor Array Preliminary data |
| SEMH11 | NPN Silicon Digital Transistor |
| SEMH13 | NPN Silicon Digital Transistor Array Preliminary data |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SEMB11 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:PNP Silicon Digital Transistor |
| SEMB13 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:PNP Silicon Digital Transistor |
| SEMB2 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:PNP Silicon Digital Transistor |
| SEMB3 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:PNP Silicon Digital Transistor |
| SEMB4 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:PNP Silicon Digital Transistor |
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