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參數(shù)資料
| 型號： | SB4045LCT |
| 元件分類： | 整流器 |
| 英文描述： | 20 A, 45 V, SILICON, RECTIFIER DIODE, TO-220AB |
| 封裝： | ROHS COMPLIANT, PLASTIC PACKAGE-3 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 83K |
| 代理商： | SB4045LCT |
PAGE . 1
Apr 26,2010-REV.00
SB4045LCT
DUAL LOW VF SCHOTTKY RECTIFIER
VOLTAGE
45 Volts
40 Amperes
FEATURES
Low forward voltage drop, low power losses
High efficiency operation
In compliance with EU RoHS 2002/95/EC directives
MECHANICAL DATA
Case : TO-220AB, Plastic
Terminals : Solderable per MIL-STD-750, Method 2026
Weight: 0.0655 ounces, 1.859 grams
CURRENT
MAXIMUM RATINGS(TA=25oC unless otherwise noted)
.058(1.47)
.042(1.07)
PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE
PARAMETER
SYMBOL
VALUE
UNIT
Maximum repetitive peak reverse voltage
VRRM
45
V
Maximum average forward rectified current (Fig.1)
per device
per diode
I F(AV)
40
20
A
Peak forward surge current 8.3ms single half sine-wave
superimposed on rated load per diode
per diode
I FSM
250
A
Typ i ca l The rm a l Re si sta nce
RΘJC
2. 5
O C/ W
Operating junction
TJ
-55 to + 125
oC
Storage temperature range
TSTG
-55 to + 150
oC
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Breakdown voltage
VBR
I R=1mA
49
-
V
Instantaneous forward voltage per
diode (1)
VF
I F=10A
I F=20A
TJ=25oC
-
0.44
0.51
0.48
0.53
V
I F=10A
I F=20A
TJ=125oC
-
0.36
0.50
-
0.55
V
Reverse current per diode (2)
I R
VR=45V
TJ=25oC
TJ=100oC
-
500
100
μA
mA
ELECTRICAL CHARACTERISTICS(TA=25oC unless otherwise noted)
Note.1.Pulse test : 300
μs pulse width, 1% duty cycle
2.Pulse test : pulse width < 40ms
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