Infineon | |
產(chǎn)品種類: | MOSFET |
RoHS: | 詳細(xì)信息 |
Si | |
Through Hole | |
TO-220-3 | |
N-Channel | |
1 Channel | |
600 V | |
16 A | |
180 mOhms | |
- 20 V, + 20 V | |
2.5 V | |
43 nC | |
- 55 C | |
+ 150 C | |
139 W | |
Enhancement | |
CoolMOS | |
CoolMOS CE | |
Tube | |
商標(biāo): | Infineon Technologies |
配置: | Single |
下降時(shí)間: | 5 ns |
高度: | 15.65 mm |
長(zhǎng)度: | 10 mm |
產(chǎn)品類型: | MOSFET |
上升時(shí)間: | 5 ns |
500 | |
子類別: | MOSFETs |
晶體管類型: | 1 N-Channel |
典型關(guān)閉延遲時(shí)間: | 50 ns |
典型接通延遲時(shí)間: | 10 ns |
寬度: | 4.4 mm |
零件號(hào)別名: | SP000084278 IPP6R199CPXK IPP60R199CPXKSA1 |
單位重量: | 2 g |
電話:18919554221/13926543930
聯(lián)系人:李潔/廖R (先生)
QQ:
郵箱:2885411644@qq.com/2885411643@qq.com
地址:深圳市福田區(qū)紅荔路3013-5號(hào)上航大廈4樓408
100%產(chǎn)品查看率
會(huì)員等級(jí)
會(huì)員年限