參數(shù)資料
型號(hào)： PHX6N60E
廠商： NXP SEMICONDUCTORS
元件分類： JFETs
英文描述： PowerMOS transistors Avalanche energy rated
中文描述： 2.8 A, 600 V, 1.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220
封裝： TO-220, 3 PIN
文件頁(yè)數(shù)： 2/8頁(yè)
文件大小： 57K
代理商： PHX6N60E
Philips Semiconductors
Product specification
PowerMOS transistors
PHX6N60E
Avalanche energy rated
ISOLATION LIMITING VALUE & CHARACTERISTIC
T
hs = 25 C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
isol
R.M.S. isolation voltage from all
f = 50-60 Hz; sinusoidal
-
2500
V
three terminals to external
waveform;
heatsink
R.H.
≤ 65% ; clean and dustfree
C
isol
Capacitance from T2 to external f = 1 MHz
-
10
-
pF
heatsink
THERMAL RESISTANCES
SYMBOL PARAMETER
CONDITIONS
MIN.
TYP. MAX. UNIT
R
th j-hs
Thermal resistance junction
with heatsink compound
-
3.6
K/W
to heatsink
R
th j-a
Thermal resistance junction
-
55
-
K/W
to ambient
ELECTRICAL CHARACTERISTICS
T
j = 25 C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
MIN.
TYP. MAX. UNIT
V
(BR)DSS
Drain-source breakdown
V
GS = 0 V; ID = 0.25 mA
600
-
V
voltage
V
(BR)DSS / Drain-source breakdown
V
DS = VGS; ID = 0.25 mA
-
0.1
-
%/K
T
j
voltage temperature
coefficient
R
DS(ON)
Drain-source on resistance
V
GS = 10 V; ID = 2.7 A
-
1.5
1.8
V
GS(TO)
Gate threshold voltage
V
DS = VGS; ID = 0.25 mA
2.0
3.0
4.0
V
g
fs
Forward transconductance
V
DS = 30 V; ID = 2.7 A
2
3.4
-
S
I
DSS
Drain-source leakage current V
DS = 600 V; VGS = 0 V
-
2
100
A
V
DS = 480 V; VGS = 0 V; Tj = 125 C
-
50
500
A
I
GSS
Gate-source leakage current V
GS = ±30 V; VDS = 0 V
-
10
200
nA
Q
g(tot)
Total gate charge
I
D = 5.4 A; VDD = 480 V; VGS = 10 V
-
50
65
nC
Q
gs
Gate-source charge
-
5
8
nC
Q
gd
Gate-drain (Miller) charge
-
26
35
nC
t
d(on)
Turn-on delay time
V
DD = 300 V; RD = 56 ;
-
15
-
ns
t
r
Turn-on rise time
R
G = 12
-35
-
ns
t
d(off)
Turn-off delay time
-
90
-
ns
t
f
Turn-off fall time
-
40
-
ns
L
d
Internal drain inductance
Measured from drain lead to centre of die
-
4.5
-
nH
L
s
Internal source inductance
Measured from source lead to source
-
7.5
-
nH
bond pad
C
iss
Input capacitance
V
GS = 0 V; VDS = 25 V; f = 1 MHz
-
650
-
pF
C
oss
Output capacitance
-
85
-
pF
C
rss
Feedback capacitance
-
50
-
pF
December 1998
2
Rev 1.200
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