
Appendix A Electrical Characteristics
MC9S12XE-Family Reference Manual , Rev. 1.07
942
Freescale Semiconductor
A.3.1.7
EEE Copy Down
Table A-18. NVM Timing Characteristics
Conditions are as shown in
Table A-4
, with 50MHz bus and f
NVMOP
= 1MHz unless otherwise noted.
Num
C
Rating
Symbol
Min
Typ
Max
Unit
1
D External oscillator clock
f
NVMOSC
2
—
50
1
1
Restrictions for oscillator in crystal mode apply.
2
Valid for both “Erase verify all” or “Erase verify block” without failing locations
3
This is a typical value for a new device
4
Maximum partitioning
MHz
2
D Bus frequency for programming or erase operations
f
NVMBUS
1
—
50
MHz
3
D Operating frequency
f
NVMOP
800
—
1050
kHz
4
D Program Flash phrase programming
t
bwpgm
—
162
171
μ
s
5a
D Program Flash phrase program time using D-LOAD on 4
blocks in parallel
t
bwpgm4
—
231
264
μ
s
5b
D Program Flash phrase program time using D-LOAD on 3
blocks in parallel
t
bwpgm3
—
208
233
μ
s
5c
D Program Flash phrase program time using D-LOAD on 2
blocks in parallel
t
bwpgm2
—
185
202
μ
s
6
P Program Flash sector erase time
t
era
—
20
21
ms
7
P Mass erase time
t
mass
—
101
102
ms
8
D Program Flash blank check time
2
t
check
—
—
33500
2
t
cyc
μ
s
9a
D Data Flash word programming one word
t
dpgm
—
88
95
9b
D Data Flash word programming two words
t
dpgm
—
153
165
μ
s
9c
D Data Flash word programming three words
t
dpgm
—
212
230
μ
s
9d
D Data Flash word programming four words
t
dpgm
—
282
300
μ
s
9e
D Data Flash word programming four words crossing row
boundary
t
dpgm
—
298
320
μ
s
10
D Data Flash sector erase time
t
eradf
—
5.2
3
21
ms
11
D Data Flash blank check time per block
t
check
—
—
33500
t
cyc
12
D EEE copy down
t
dfrcd
—
205000
225000
4
t
cyc
t
dfcd
33944
316 N
rs
(
)
1500
N
dfs
4
–
(
)
(
)
+
+
(
)
1
f
NVMBUS
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