參數(shù)資料
型號(hào)： P89LPC9381FDH
廠商： NXP Semiconductors N.V.
元件分類： 8位微控制器
英文描述： 8-bit microcontroller with accelerated two-clock 80C51 core 4 kB 3 V byte-erasable flash with 10-bit ADC
封裝： P89LPC9381FDH<SOT361-1 (TSSOP28)|<<http://www.nxp.com/packages/SOT361-1.html<1<Always Pb-free,;
文件頁(yè)數(shù)： 31/59頁(yè)
文件大?。?/td> 286K
代理商： P89LPC9381FDH
P89LPC9381_1
Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 01 — 8 September 2006
37 of 60
Philips Semiconductors
P89LPC9381
8-bit microcontroller with 10-bit ADC
7.26 Flash program memory
7.26.1 General description
The P89LPC9381 ash memory provides in-circuit electrical erasure and programming.
The ash can be erased, read, and written as bytes. The Sector and Page Erase functions
can erase any ash sector (1 kB) or page (64 B). The Chip Erase operation will erase the
entire program memory. In-Circuit Programming using standard commercial programmers
is available. In addition, IAP and byte-erase allows code memory to be used for
non-volatile data storage. On-chip erase and write timing generation contribute to a
user-friendly programming interface. The P89LPC9381 ash reliably stores memory
contents even after 100000 erase and program cycles. The cell is designed to optimize
the erase and programming mechanisms. The P89LPC9381 uses VDD as the supply
voltage to perform the Program/Erase algorithms.
7.26.2 Features
Programming and erase over the full operating voltage range.
Byte erase allows code memory to be used for data storage.
Read/Programming/Erase using ISP/IAP/ICP.
Internal xed boot ROM, containing low-level IAP routines available to user code.
Default loader providing In-System Programming via the serial port, located in upper
end of user program memory.
Boot vector allows user-provided ash loader code to reside anywhere in the ash
memory space, providing exibility to the user.
Any ash program/erase operation in 2 ms.
Programming with industry-standard commercial programmers.
Programmable security for the code in the ash for each sector.
400000 typical erase/program cycles for each byte.
20 year minimum data retention.
7.26.3 Flash organization
The program memory consists of four 1 kB sectors on the P89LPC9381 devices. Each
sector can be further divided into 64 B pages. In addition to sector erase, page erase, and
byte erase, a 64 B page register is included which allows from 1 B to 64 B of a given page
to be programmed at the same time, substantially reducing overall programming time.
7.26.4 Using ash as data storage
The ash code memory array of this device supports individual byte erasing and
programming. Any byte in the code memory array may be read using the MOVC
instruction, provided that the sector containing the byte has not been secured (a MOVC
instruction is not allowed to read code memory contents of a secured sector). Thus any
byte in a non-secured sector may be used for non-volatile data storage.
7.26.5 Flash programming and erasing
Four different methods of erasing or programming of the ash are available. The ash may
be programmed or erased in the end-user application (IAP) under control of the
application’s rmware. Another option is to use the ICP mechanism. This ICP system
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