參數(shù)資料
型號(hào)： P6KE7.5CA-E3/4
廠商： VISHAY SEMICONDUCTORS
元件分類(lèi)： 參考電壓二極管
英文描述： 600 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-204AC
封裝： ROHS COMPLIANT, PLASTIC, DO-15, 2 PIN
文件頁(yè)數(shù)： 6/7頁(yè)
文件大?。?/td> 98K
代理商： P6KE7.5CA-E3/4
www.vishay.com
6
Document Number 88369
20-Jun-06
Vishay General Semiconductor
P6KE6.8 thru P6KE540A
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
APPLICATION NOTE
This P6KE TVS series is a low cost commercial
product for use in applications where large voltage
transients can permanently damage voltage-sensitive
components.
The P6KE series device types are designed in a small
package
size
where
power
and
space
is
a
consideration. They are characterized by their high
surge capability, extremely fast response time, and low
impedance, (Ron). Because of the unpredictable
nature
of
transients,
and
the
variation
of
the
impedance
with
respect
to
these
transients,
impedance, per se, is not specified as a parametric
value. However, a minimum voltage at low current
conditions (BV) and a maximum clamping voltage (Vc)
at a maximum peak pulse current is specified.
In some instances, the thermal effect (see Vc
Clamping Voltage) may be responsible for 50 % to
70 %. of the observed voltage differential when
subjected to high current pulses for several duty
cycles,
thus
making
a
maximum
impedance
specification insignificant.
In case of a severe current overload or abnormal
transient beyond the maximum ratings, the Transient
Voltage Suppressor will initially fail 'short' thus tripping
the system's circuit breaker or fuse while protecting the
entire circuit. Curves depicting clamping voltage vs.
various current pulses are available from the factory.
Extended power curves vs. pulse time are also
available.
Figure 7. Typical Reverse Leakage Characteristics
V(BR) - Breakdown Voltage (V)
ID
-
Instantaneo
u
s
Re
v
erse
Leakage
C
u
rrent
(
A)
0.01
0.1
10
100
1
0
100
200
300
400
600
500
Measured at Devices
Stand-off Voltage VWM
TA = 25 °C
Figure 8. Typical Transient Thermal Impedance
tp - Pulse Duration (sec)
Transient
Thermal
Impedance
(°C/
W
)
10
100
1
0.1
0.001
0.01
0.1
1
10
100
1000
0.034 (0.86)
0.028 (0.71)
Dia.
0.140 (3.6)
0.104 (2.6)
Dia.
0.230 (5.8)
0.300 (7.6)
1.0 (25.4)
min.
1.0 (25.4)
min.
DO-204AC (DO-15)
相關(guān)PDF資料
PDF描述
P6KE10CA-HE3/54 600 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-204AC
P6KE12A-HE3/54 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-204AC
P6KE15CA-HE3/54 600 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-204AC
P6KE200A-HE3/54 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-204AC
P6KE24CA-HE3/54 600 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-204AC
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
P6KE75CA-G 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 600W, 75V,Bidir, RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C
P6KE75CAHE3/54 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 600W 75V 5% Bidir RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C
P6KE75CAHE3/73 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 600W 75V 5% Bidir RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C
P6KE75CA-T 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 600W 64.10V RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C
P6KE75CA-TP 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 BI-DIR 600W 5.8A RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C
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