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| 型號(hào)： | P6KE10CA-HE3/54 |
| 廠(chǎng)商： | VISHAY SEMICONDUCTORS |
| 元件分類(lèi)： | 參考電壓二極管 |
| 英文描述： | 600 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-204AC |
| 封裝： | ROHS COMPLIANT, PLASTIC, DO-15, 2 PIN |
| 文件頁(yè)數(shù)： | 5/7頁(yè) |
| 文件大?。?/td> | 98K |
| 代理商： | P6KE10CA-HE3/54 |
Vishay General Semiconductor
P6KE6.8 thru P6KE540A
Document Number 88369
20-Jun-06
www.vishay.com
5
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
Figure 1. Peak Pulse Power Rating Curve
Figure 2. Pulse Power or Current versus Initial
Junction Temperature
Figure 3. Pulse Waveform
td - Pulse Width (sec.)
0.1
1
10
100
1.0 ms
10 ms
0.1 s
1.0 s
10 s
100 s
Non-repetitive Pulse
Waveform shown in Fig. 3
TA = 25 °C
P
PPM
,P
e
ak
P
u
lse
P
o
w
er
(k
W
)
100
75
50
25
0
25
50
75
100
125
150
175
200
P
eak
P
u
lse
P
o
w
er
(P
PP
)or
C
u
rrent
(I
PP
)
Der
ating
in
P
ercentage
,
%
TJ - Initial Temperature (°C)
100
50
0
1.0
2.0
3.0
4.0
150
tr = 10 sec.
Peak Value
IPPM
10/1000 sec. Waveform
as defined by R.E.A.
TJ = 25 °C
Pulse Width (td)
is defined as the point
where the peak current
decays to 50 % of IPPM
Half Value -
IPPM
IPP
2
td
IPPM
-
P
e
ak
P
u
lse
C
u
rrent,
%
I
RSM
t - Time (ms)
Figure 4. Typical Junction Capacitance Uni-Directional
Figure 5. Power Derating Curve
Figure 6. Maximum Non-Repetitive Forward Surge Current
10
100
1000
6000
10
100
200
1.0
C
J,
J
u
nction
Capacitance
(pF)
V(BR) - Breakdown Voltage (V)
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
Measured at
Zero Bias
Measured at Stand-off
Voltage VWM
6
5
4
3
2
1
0
25
50
75
100
125
150
175
200
L = 0.375" (9.5 mm)
Lead Lengths
P
D
,P
o
w
er
Dissipation
(
W
)
TL - Lead Temperature (°C)
60 Hz
Resistive or
Inductive Load
200
100
50
10
1
5
10
50
100
IFSM
-
Pe
a
k
F
o
rw
ard
S
u
rge
C
u
rrent
(A
)
Number of Cycles at 60 Hz
Uni-Directional Only
TJ = TJ max.
8.3 ms Single Half Sine-Wave
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