參數(shù)資料
型號: OP236TXV
廠商: OPTEK TECHNOLOGY INC
元件分類: 紅外LED
英文描述: Hi- Reliability GaAlAs Infrared Emitting Diodes
中文描述: 1 ELEMENT, INFRARED LED, 890 nm
封裝: HERMETIC SEALED, TO-46, 2 PIN
文件頁數(shù): 1/2頁
文件大?。?/td> 161K
代理商: OP236TXV
Fea ures
Twice the power output of GaAs at the
same drive current
Characterized to define infrared energy
along the mechanical axis of the
device
Mechanically and spectrally matched
to the OP804TX/TXV and
OP805TX/TXV phototransistors
Screened per MIL-PRF-19500 TX or
TXV equivalent levels
De scrip ion
The OP235TX, TXV and OP236TX, TXV
are high reliability gallium aluminum
arsenide infrared emitting diodes
mounted in hermetic TO-46 packages.
The wavelength is centered at 890
nanometers to closely match the spectral
response of silicon photoransistors.
Devices are processed to Optek’s 100%
screening and quality conformance
program patterned after MIL-PRF-19500.
After 100% screening, Group A and B are
performed on every lot, and a Group C
test is performed every six months.
The OP235TX, TXV and OP236TX, TXV
have lens cans providing a narrow beam
angle (18
o
between half power points).
The narrow beam angle and the specified
radiant intensity allow ease of design in
beam interrupt applications with the
OP804TX, TXV and OP805TX, TXV
series of high reliability phototransistors.
Ab so ute Maxi mum Rat ngs
(T
A
= 25
o
C un ess oth er wise noted)
For ward DC Cur ent . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100 mA
Re verse Volt age. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.0 V
Op er at ng Tem pera ure . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55
o
C to +125
o
C
Stor age Tem pera ure. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65
o
C to +150
o
C
Lead Sol der ng Tem pera ure [1/16 inch (1.6mm) from case for 5 sec. with sol der ng
iron] . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 240
o
C
(1)
Power Dis si pa ion . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200 mW
(2)
Notes:
(1) RMA flux is recommended. Duration can be extended to 10 seconds max. when flow
soldering.
(2) Derate linearly 2.00 mW/
o
C above 25
o
C.
(3) E
is a measurement of the average radiant intensity within the cone formed by the
measurement surface. The cone is outlined by a radius of 1.429 inches (36.30 mm)
measured from the lens side of the tab to the sensing surface and a sensing surface of 0.250
inches (6.35 mm) in diameter forming a 10
o
cone. E
e(APT)
is not necessarily uniform within
the measured area.
Typical screening and lot acceptance tests are provided on page 13-4.
Prod uct Bul e in OP235TX
Sep em ber 1996
Hi- Reliability GaA As In ra ed Emit ing Di odes
Types OP235TX, OP235TXV, OP236TX, OP236TXV
Op ek Tech nol ogy, Inc. 1215 W. Crosby Road Car oll on, Texas 75006 (972) 323- 2200 Fax (972) 323- 2396
13-28
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