型號: | NTE21 |
元件分類: | 開關(guān) |
英文描述: | TOGGLE SWITCH, DP3T, MOMENTARY, 4A, 28VDC, PANEL MOUNT-THREADED |
文件頁數(shù): | 6/7頁 |
文件大?。?/td> | 525K |
代理商: | NTE21 |
相關(guān)PDF資料 |
PDF描述 |
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NTE211 | TOGGLE SWITCH, DP3T, MOMENTARY, 4A, 28VDC, PANEL MOUNT-THREADED |
NTE217 | TOGGLE SWITCH, DP3T, MOMENTARY, 4A, 28VDC, PANEL MOUNT-THREADED |
NTE219 | TOGGLE SWITCH, DP3T, MOMENTARY, 4A, 28VDC, PANEL MOUNT-THREADED |
NTE2306 | TOGGLE SWITCH, DP3T, MOMENTARY, 4A, 28VDC, PANEL MOUNT-THREADED |
NTE2329 | TOGGLE SWITCH, DP3T, MOMENTARY, 4A, 28VDC, PANEL MOUNT-THREADED |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
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NTE210 | 制造商:NTE Electronics 功能描述:BIPOLAR TRANSISTOR NPN 75V 制造商:NTE Electronics 功能描述:T-NPN- SI-AF POSW 制造商:NTE Electronics 功能描述:Trans GP BJT NPN 75V 1A 3-Pin(3+Tab) TO-202 |
NTE2102 | 制造商:NTE Electronics 功能描述:IC-MOS 1K SRAM 制造商:NTE Electronics 功能描述:IC, SRAM, 1KBIT, SERIAL, 350NS, 16-DIP; Memory Size:1Kbit; Memory Configuration:1K x 1; Supply Voltage Min:4.75V; Supply Voltage Max:5.25V; Memory Case Style:DIP; No. of Pins:16; Access Time:350ns; Operating Temperature Min:0C 制造商:NTE Electronics 功能描述:SRAM Chip Async Single 5V 1K-Bit 1K x 1 350ns 16-Pin PDIP |
NTE2104 | 制造商:NTE Electronics 功能描述:IC-MOS 4K DRAM 制造商:NTE Electronics 功能描述:4K X 1 SRAM 200NS 制造商:NTE Electronics 功能描述:IC, DRAM, 4KBIT, DIP-16; Memory Type:DRAM - NMOS; Memory Configuration:4K x 1; Access Time:200ns; Page Size:4Kbit; Memory Case Style:DIP; No. of Pins:16; Operating Temperature Min:0C; Operating Temperature Max:70C; Memory Size:4KB 制造商:NTE Electronics 功能描述:IC, DRAM, 4KBIT, DIP-16; Memory Type:DRAM - NMOS; Memory Configuration:4K x 1; Access Time:200ns; Page Size:4Kbit; Memory Case Style:DIP; No. of Pins:16; IC Interface Type:(Not Available); Operating Temperature Min:0C |
NTE2107 | 制造商:NTE Electronics 功能描述:IC, DRAM, 4KBIT, DIP-16; Memory Type:DRAM - NMOS; Memory Configuration:4K x 1; Access Time:200ns; Page Size:4Kbit; Memory Case Style:DIP; No. of Pins:16; Operating Temperature Min:0C; Operating Temperature Max:70C ;RoHS Compliant: Yes 制造商:NTE Electronics 功能描述:IC, DRAM, 4KBIT, DIP-16; Memory Type:DRAM - NMOS; Memory Configuration:4K x 1; Access Time:200ns; Page Size:4Kbit; Memory Case Style:DIP; No. of Pins:16; IC Interface Type:(Not Available); Operating Temperature Min:0C ;RoHS Compliant: Yes |
NTE211 | 制造商:NTE Electronics 功能描述:Trans GP BJT PNP 75V 1A 3-Pin(3+Tab) TO-202 |