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參數(shù)資料
| 型號： | MW6S010NR1 |
| 廠商： | 飛思卡爾半導(dǎo)體(中國)有限公司 |
| 英文描述： | RF Power Field Effect Transistor |
| 中文描述： | RF功率場效應(yīng)晶體管 |
| 文件頁數(shù)： | 2/16頁 |
| 文件大?。?/td> | 542K |
| 代理商： | MW6S010NR1 |
2
RF Device Data
Freescale Semiconductor
MW6S010NR1 MW6S010GNR1 MW6S010MR1 MW6S010GMR1
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22-A114)
1A
Machine Model (per EIA/JESD22-A115)
A
Charge Device Model (per JESD22-C101)
III
Table 4. Moisture Sensitivity Level
Test Methodology
Rating
Package Peak Temperature
Unit
Per JESD 22-A113, IPC/JEDEC J-STD-020
1
260
°
C
Table 5. Electrical Characteristics
(T
C
= 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(V
DS
= 68
Vdc, V
GS
= 0 Vdc)
I
DSS
—
—
10
μ
Adc
Zero Gate Voltage Drain Leakage Current
(V
DS
= 28 Vdc, V
GS
= 0 Vdc)
I
DSS
—
—
1
μ
Adc
Gate-Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
I
GSS
—
—
1
μ
Adc
On Characteristics
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 100
μ
Adc)
V
GS(th)
1.5
2.3
3
Vdc
Gate Quiescent Voltage
(V
DS
= 28 Vdc, I
D
= 125 mAdc)
V
GS(Q)
—
3.1
—
Vdc
Drain-Source On-Voltage
(V
GS
= 10 Vdc, I
D
= 0.3 Adc)
V
DS(on)
—
0.27
0.35
Vdc
Dynamic Characteristics
Input Capacitance
(V
DS
= 28 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
C
iss
—
23
—
pF
Output Capacitance
(V
DS
= 28 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
C
oss
—
10
—
pF
Reverse Transfer Capacitance
(V
DS
= 28 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
C
rss
—
0.32
—
pF
Functional Tests
(In Freescale Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ
= 125 mA, P
out
= 10 W PEP, f = 960 MHz,
Two-Tone Test, 100 kHz Tone Spacing
Power Gain
G
ps
η
D
17.5
18
20.5
dB
Drain Efficiency
31
32
—
%
Intermodulation Distortion
IMD
—
-37
-33
dBc
Input Return Loss
IRL
—
-18
-10
dB
Typical
Performances
(In Freescale 450 MHz Demo Board, 50
ο
hm system) V
DD
= 28 Vdc, I
DQ
= 150 mA, P
out
= 10 W PEP,
420 MHz<Frequency<470 MHz, Two-Tone Test, 100 kHz Tone Spacing
Power Gain
G
ps
—
20
—
dB
Drain Efficiency
η
D
—
33
—
%
Intermodulation Distortion
IMD
—
-40
—
dBc
Input Return Loss
IRL
—
-10
—
dB
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MW6S010NR1_09 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
| MW6S-12A | 制造商:TE Connectivity 功能描述:MW6S-12A = MW 6GHZ SENSITIVE H |
| MW6S-12P | 制造商:TE Connectivity 功能描述:MW6S-12P = MW 6GHZ SENSITIVE H |
| MW6S-5P | 制造商:TE Connectivity 功能描述:Military/Aerospace High Performance Relays 制造商:TE Connectivity 功能描述:MW6S-5P = MW 6GHZ SENSITIVE HI |
| MW700 | 制造商:Datak Corporation 功能描述: |
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