參數(shù)資料
型號(hào): MW6S010GMR1
廠商: 飛思卡爾半導(dǎo)體(中國(guó))有限公司
英文描述: RF Power Field Effect Transistor
中文描述: RF功率場(chǎng)效應(yīng)晶體管
文件頁(yè)數(shù): 3/16頁(yè)
文件大?。?/td> 542K
代理商: MW6S010GMR1
MW6S010NR1 MW6S010GNR1 MW6S010MR1 MW6S010GMR1
3
RF Device Data
Freescale Semiconductor
Figure 1. MW6S010NR1(GNR1/MR1/GMR1) Test Circuit Schematic — 900 MHz
C9
C2
+
RF
OUTPUT
C5
V
BIAS
C3
+
V
SUPPLY
RF
INPUT
Z1
C1
Z2
Z3
Z4
C8
R1
DUT
C4
B1
C6
C7
C10
Z5
L1
C14
Z6
C17
C20
Z7
C11
C12
C13
C15
C16
+
C18
+
C19
+
Z5
Z6
Z7
PCB
0.313
x 0.902
Microstrip
0.073
x 1.080
Microstrip
0.073
x 0.314
Microstrip
Rogers ULTRALAM 2000, 0.031
,
ε
r
= 2.55
Z1
Z2
Z3
Z4
0.073
x 0.223
Microstrip
0.112
x 0.070
Microstrip
0.213
x 0.500
Microstrip
0.313
x 1.503
Microstrip
Table 6. MW6S010NR1(GNR1/MR1/GMR1) Test Circuit Component Designations and Values — 900 MHz
Part
Description
Part Number
2743019447
100B470JP500X
T491D226K035AS
13668221
CDR33BX104AKWS
272915L
100B240JP500X
100B6R8JP500X
100B7R5JP500X
A04T-5
CRCW12061001F100
Manufacturer
Fair-Rite
ATC
Kemet
Phillips
Kemet
Johanson
ATC
ATC
ATC
Coilcraft
Vishay-Dale
B1
C1, C6, C11, C20
C2, C18, C19
C3, C16
C4, C15
C5, C8, C17
C7, C12
C9, C10, C13
C14
L1
R1
Ferrite Bead
47 pF Chip Capacitors
22
μ
F, 35 V Tantalum Capacitors
220
μ
F, 63 V Electrolytic Capacitors, Radial
0.1
μ
F Chip Capacitors
0.8-8.0 pF Variable Capacitors, Gigatrim
24 pF Chip Capacitors
6.8 pF Chip Capacitors
7.5 pF Chip Capacitor
12.5 nH Inductor
1 k
Chip Resistor
相關(guān)PDF資料
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MW6S010GNR1 RF Power Field Effect Transistor
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