參數(shù)資料
型號： MW6S004NT1
廠商： 飛思卡爾半導體(中國)有限公司
英文描述： RF Power Field Effect Transistor
中文描述： RF功率場效應晶體管
文件頁數(shù)： 9/13頁
文件大?。?/td> 504K
代理商： MW6S004NT1
MW6S004NT1
9
RF Device Data
Freescale Semiconductor
Table 7. Common Source Scattering Parameters (V
DD
= 28 V, 50 ohm system)
I
DQ
= 50 mA
f
MHz
S
11
S
21
S
12
S
22
|S
11
|
∠ φ
|S
21
|
∠ φ
|S
12
|
∠ φ
|S
22
|
∠ φ
500
0.649
-116.340
7.902
105.420
0.056
-73.750
0.548
-33.570
550
0.695
-121.680
7.502
98.790
0.053
-80.570
0.593
-41.480
600
0.733
-126.560
7.111
92.380
0.049
-87.010
0.632
-48.890
650
0.770
-131.340
6.699
86.290
0.045
-93.280
0.669
-56.000
700
0.800
-135.740
6.302
80.450
0.041
-99.120
0.701
-62.810
750
0.827
-140.030
5.922
74.850
0.038
-104.850
0.727
-69.290
800
0.848
-143.950
5.552
69.630
0.035
-110.110
0.750
-75.350
850
0.866
-147.690
5.220
64.580
0.032
-115.220
0.770
-81.130
900
0.882
-151.140
4.891
59.970
0.029
-119.960
0.786
-86.570
950
0.895
-154.560
4.597
55.490
0.026
-124.790
0.800
-91.730
1000
0.907
-157.590
4.315
51.240
0.024
-129.090
0.813
-96.660
1050
0.916
-160.540
4.060
47.170
0.022
-133.370
0.824
-101.340
1100
0.923
-163.310
3.819
43.340
0.020
-137.460
0.833
-105.790
1150
0.929
-165.930
3.601
39.650
0.018
-141.440
0.840
-110.050
1200
0.935
-168.430
3.398
36.110
0.017
-145.330
0.847
-114.170
1250
0.938
-170.770
3.210
32.740
0.015
-149.540
0.851
-118.060
1300
0.942
-173.030
3.036
29.490
0.014
-153.430
0.856
-121.880
1350
0.945
-175.140
2.875
26.360
0.013
-157.460
0.859
-125.520
1400
0.948
-177.170
2.728
23.330
0.012
-161.910
0.863
-129.020
1450
0.951
-179.090
2.590
20.440
0.011
-166.180
0.866
-132.390
1500
0.953
179.030
2.464
17.640
0.010
-170.630
0.869
-135.650
1550
0.954
177.270
2.347
14.920
0.009
-174.890
0.872
-138.760
1600
0.955
175.570
2.240
12.320
0.008
179.950
0.875
-141.750
1650
0.956
173.980
2.139
9.740
0.008
173.920
0.877
-144.650
1700
0.957
172.350
2.047
7.250
0.007
167.710
0.880
-147.480
1750
0.957
170.800
1.958
4.810
0.007
161.810
0.882
-150.180
1800
0.958
169.340
1.879
2.440
0.006
155.370
0.884
-152.760
1850
0.959
167.920
1.806
0.260
0.006
148.940
0.886
-155.230
1900
0.959
166.510
1.736
-1.980
0.005
142.630
0.887
-157.580
1950
0.960
165.200
1.668
-4.310
0.005
136.740
0.888
-160.050
2000
0.959
163.800
1.611
-6.240
0.005
129.910
0.890
-162.070
2050
0.959
162.420
1.555
-8.290
0.005
123.810
0.891
-164.190
2100
0.958
161.170
1.504
-10.270
0.005
118.200
0.892
-166.140
2150
0.958
159.840
1.456
-12.210
0.005
112.740
0.893
-168.060
2200
0.957
158.560
1.412
-14.130
0.005
108.460
0.894
-169.840
2250
0.957
157.160
1.372
-16.010
0.005
103.840
0.896
-171.610
2300
0.955
155.870
1.334
-17.870
0.005
99.310
0.896
-173.260
2350
0.954
154.510
1.300
-19.700
0.005
95.360
0.897
-174.830
2400
0.953
153.120
1.268
-21.510
0.005
91.030
0.898
-176.390
2450
0.953
151.730
1.238
-23.250
0.005
87.460
0.899
-177.840
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MW6S010 RF Power Field Effect Transistor
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MW6S004NT1_07 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor
MW6S010 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor
MW6S010GMR1 功能描述:MOSFET RF N-CH 28V 10W TO270-2GW RoHS:是 類別:分離式半導體產(chǎn)品 >> RF FET 系列:- 產(chǎn)品目錄繪圖:MOSFET SOT-23-3 Pkg 標準包裝:3,000 系列:- 晶體管類型:N 通道 JFET 頻率:- 增益:- 電壓 - 測試:- 額定電流:30mA 噪音數(shù)據(jù):- 電流 - 測試:- 功率 - 輸出:- 電壓 - 額定:25V 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應商設備封裝:SOT-23-3（TO-236） 包裝:帶卷 (TR) 產(chǎn)品目錄頁面:1558 (CN2011-ZH PDF) 其它名稱:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR
MW6S010GNR1 功能描述:射頻MOSFET電源晶體管 HV6 900MHZ 10W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
MW6S010GNR1-CUT TAPE 制造商:Freescale 功能描述:MW6S010 Series 450-1500 MHz 10 W 28 V Lateral N-Ch RF Power MOSFET
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