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參數(shù)資料
| 型號： | MW6IC2015GNBR1 |
| 廠商： | 飛思卡爾半導(dǎo)體(中國)有限公司 |
| 英文描述： | RF LDMOS Wideband Integrated Power Amplifiers |
| 中文描述： | 射頻LDMOS寬帶集成功率放大器 |
| 文件頁數(shù)： | 1/28頁 |
| 文件大?。?/td> | 1132K |
| 代理商： | MW6IC2015GNBR1 |
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MW6IC2015NBR1 MW6IC2015GNBR1
1
RF Device Data
Freescale Semiconductor
RF LDMOS Wideband Integrated
Power Amplifiers
The MW6IC2015N wideband integrated circuit is designed for base station
applications. It uses Freescale’s newest High Voltage (26 to 32 Volts) LDMOS
IC technology and integrates a multi-stage structure. Its wideband on-chip
design makes it usable from 1805 to 1990 MHz. The linearity performances
cover all modulation formats for cellular applications: GSM, GSM EDGE, PHS,
TDMA, CDMA, W-CDMA and TD-SCDMA.
Final Application
Typical Two-Tone Performance: V
DD
= 26 Volts, I
DQ1
= 100 mA, I
DQ2
=
170 mA, P
out
= 15 Watts PEP, Full Frequency Band (1805-1880 MHz or
1930-1990 MHz)
Power Gain — 26 dB
Power Added Efficiency — 28%
IMD — -30 dBc
Driver Application
Typical GSM EDGE Performance: V
DD
= 26 Volts, I
DQ1
= 130 mA, I
DQ2
=
170 mA, P
out
= 3 Watts Avg., Full Frequency Band (1805-1880 MHz or
1930-1990 MHz)
Power Gain — 27 dB
Power Added Efficiency — 19%
Spectral Regrowth @ 400 kHz Offset = -69 dBc
Spectral Regrowth @ 600 kHz Offset = -78 dBc
EVM — 0.8% rms
Capable of Handling 3:1 VSWR, @ 26 Vdc, 1990 MHz, 15 Watts CW
Output Power
Stable into a 3:1 VSWR. All Spurs Below -60 dBc @ 100 mW to 8 W CW
P
out
.
Features
Characterized with Series Equivalent Large-Signal Impedance Parameters
and Common Source Scattering Parameters
On-Chip Matching (50 Ohm Input, DC Blocked, >5 Ohm Output)
Integrated Quiescent Current Temperature Compensation with
Enable/Disable Function
Integrated ESD Protection
Designed for Lower Memory Effects and Wide Instantaneous Bandwidth
Applications
200
°
C Capable Plastic Package
RoHS Compliant
In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel
Document Number: MW6IC2015N
Rev. 2, 2/2007
Freescale Semiconductor
Technical Data
1805-1990 MHz, 15 W, 26 V
GSM/GSM EDGE, CDMA
RF LDMOS WIDEBAND
INTEGRATED POWER AMPLIFIERS
MW6IC2015NBR1
MW6IC2015GNBR1
CASE 1329-09
TO-272 WB-16
PLASTIC
MW6IC2015NBR1
CASE 1329A-03
TO-272 WB-16 GULL
PLASTIC
MW6IC2015GNBR1
(Top View)
GND
V
DS1
NC
NC
NC
RF
in
V
GS1
V
GS2
NC
GND
NC
RF
out
/
V
DS2
GND
1
2
3
4
5
6
7
8
9
10
11
16
15
14
13
12
GND
Quiescent Current
Temperature Compensation
V
DS1
RF
in
V
GS1
V
GS2
RF
out
/V
DS2
NC
NC
Note: Exposed backside flag is source
terminal for transistors.
Figure 2. Pin Connections
Figure 1. Functional Block Diagram
Freescale Semiconductor, Inc., 2007. All rights reserved.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MW6IC2015MBR1 | 功能描述:IC PWR AMP RF 26V 15W TO-272-16 RoHS:否 類別:RF/IF 和 RFID >> RF 放大器 系列:- 標(biāo)準(zhǔn)包裝:3,000 系列:- 頻率:100MHz ~ 6GHz P1dB:9.14dBm（8.2mW） 增益:15.7dB 噪音數(shù)據(jù):1.3dB RF 型:CDMA，TDMA，PCS 電源電壓:2.7 V ~ 5 V 電流 - 電源:60mA 測試頻率:2GHz 封裝/外殼:0505（1412 公制） 包裝:帶卷 (TR) |
| MW6IC2015NBR1 | 功能描述:射頻放大器 1805-1990MHZ RoHS:否 制造商:Skyworks Solutions, Inc. 類型:Low Noise Amplifier 工作頻率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 輸出截獲點:37.5 dBm 功率增益類型:32 dB 噪聲系數(shù):0.85 dB 工作電源電壓:5 V 電源電流:125 mA 測試頻率:2.6 GHz 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:QFN-16 封裝:Reel |
| MW6IC2015NBR1_08 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF LDMOS Wideband Integrated Power Amplifiers |
| MW6IC2240GNBR1 | 功能描述:射頻放大器 2110-2170MHZ RoHS:否 制造商:Skyworks Solutions, Inc. 類型:Low Noise Amplifier 工作頻率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 輸出截獲點:37.5 dBm 功率增益類型:32 dB 噪聲系數(shù):0.85 dB 工作電源電壓:5 V 電源電流:125 mA 測試頻率:2.6 GHz 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:QFN-16 封裝:Reel |
| MW6IC2240N | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF LDMOS Wideband Integrated Power Amplifiers |
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