參數(shù)資料
型號: MRFIC0970
廠商: 飛思卡爾半導(dǎo)體(中國)有限公司
英文描述: 3.2V GSM GaAs Intergrated Power Amplifier
中文描述: 3.2V的集成的GSM砷化鎵功率放大器
文件頁數(shù): 3/8頁
文件大?。?/td> 319K
代理商: MRFIC0970
MOTOROLA
MRFIC0970
Technical Data
For More Information On This Product,
Go to: www.freescale.com
3
Table 3. Electrical Specifications
(V
D1,2,3
= 3.2 V, V
abc
= 2.6 V, P
in
= 5.0 dBm, Peak measurement at 12.5% duty cycle, 4.6 ms period, T
A
= 25°C, unless otherwise
noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
Frequency Range
BW
880
-
915
MHz
Output Power
P
out
34.5
-
-
dBm
Power Added Efficiency
PAE
50
-
-
%
Minimum Output Power (V
ref
= 0.04, V
abc
= 2.6 V)
-
-
-17
dBm
Power Control Slope (V
ref
= 0.1 to 1.8 V,
V
ref
= 0.01 V)
-
-
50:1
RFVrms
/V
ref
Bleed thru Power (P
in(fo)
-12dBm, V
ref
= 0.04,
V
abc
= 10 k load)
-
-
-36
dBm
RF Leakage Current (I
DD1
+ I
DD2
+I
DD3,
Pin (f
o
)
5.0
dBm)
(V
abc
= 10 k load, V
ref
= 0.04 V)
-
-
35
mA
Output Power Switching Speed (± step input of V
ref
RF
Pout within 1.0 dB of final value)
-
-
1.0
μ
s
Input Return Loss
|S11|
-
-
6.0
dB
Noise Power in Rx band
925 to 935 MHz
935 to 960 MHz
NP
-
-
-
-
-73
-85
dBm
Stability-Spurious Output (Load VSWR 6:1 all phase
angles, Adjust V
D1, 2&3
for specified power)
P
spur
-
-
-30
dBc
Load Mismatch Stress (Load VSWR = 10:1 all phase
angles, 5 seconds, Adjust V
D1, 2&3
for specified power)
No Degradation in Output Power
Before & After Test
F
Freescale Semiconductor, Inc.
n
.
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