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參數(shù)資料
| 型號(hào)： | MRFG35030R5 |
| 廠商： | 飛思卡爾半導(dǎo)體(中國)有限公司 |
| 英文描述： | Gallium Arsenide PHEMT RF Power Field Effect Transistor |
| 中文描述： | 砷化鎵PHEMT的射頻功率場效應(yīng)晶體管 |
| 文件頁數(shù)： | 3/12頁 |
| 文件大?。?/td> | 245K |
| 代理商： | MRFG35030R5 |
MRFG35030R5
3
RF Device Data
Freescale Semiconductor
Z1
Z2
Z3
Z4
Z5, Z6
0.065
″
x 0.500
″
Microstrip
0.065
″
x 0.185
″
Microstrip
0.115
″
x 0.350
″
Microstrip
0.065
″
x 0.215
″
Microstrip
0.020
″
x 0.527
″
Microstrip
Z7
Z8
Z9
PCB
0.085
″
x 0.205
″
Microstrip
0.065
″
x 0.230
″
Microstrip
0.065
″
x 0.814
″
Microstrip
Rogers RO4350, 0.030
″
,
ε
r
= 3.5
Figure 1. MRFG35030 Test Circuit Schematic
Table 4.
MRFG35030
Test Circuit Component Designations and Values
Part
C1, C2, C17
6.8 pF Chip Capacitors
C3, C16
10 pF Chip Capacitors
C4, C15
100 pF Chip Capacitors
C5, C14
100 pF Chip Capacitors
C6, C13
1000 pF Chip Capacitors
C7, C12
0.1
μ
F Chip Capacitors
C8, C11
39K Chip Capacitors
C9, C10
22
μ
F, 35 V Tantalum Capacitors
C18
1.0 pF Chip Capacitor
C19
0.7 pF Chip Capacitor
C20
0.3 pF Chip Capacitor
R1
10 , 1/4 W, 1% Resistor
Description
Part Number
Manufacturer
ATC
ATC
ATC
ATC
ATC
Newark
ATC
ATC
AVX
AVX
AVX
Dale
100A6R8CP500X
100A100JP500X
100A101JP500X
100B101JP500X
100B102JP500X
CDR33BX104AKWS
200B393KP50X
T491X226K035AS
08051J1R0BBT
08051J0R7BBT
08051J0R3BBT
D55342M07B10J0R
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