參數(shù)資料
型號: MRFG35030R5
廠商: 飛思卡爾半導(dǎo)體(中國)有限公司
英文描述: Gallium Arsenide PHEMT RF Power Field Effect Transistor
中文描述: 砷化鎵PHEMT的射頻功率場效應(yīng)晶體管
文件頁數(shù): 2/12頁
文件大小: 245K
代理商: MRFG35030R5
2
RF Device Data
Freescale Semiconductor
MRFG35030R5
Table 3. Electrical Characteristics
(T
C
= 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
DC Characteristics
Off State Drain Current
(V
DS
= 3.5 Vdc, V
GS
=
2 Vdc)
I
DSO
15
425
μ
Adc
Off State Current
(V
DS
= 28.5 Vdc, V
GS
=
2.5 Vdc)
I
DSX
5
42.5
mAdc
Gate
Source Cut
off Voltage
(V
DS
= 3.5 Vdc, I
DS
= 1 mA/mm)
V
GS(th)
0.7
0.85
1.1
Vdc
Functional Tests
(In Freescale Test Fixture, 50 ohm system)
(1)
V
DD
= 12 Vdc, I
DQ
= 650 mA
,
P
out
= 3 W Avg., f = 3550 MHz,
Single
carrier W
CDMA, 3.84 MHz Channel Bandwidth Carrier. ACPR measured in 3.84 MHz Channel Bandwidth @
±
5 MHz Offset.
Peak/Avg. = 8.5 dB @ 0.01% Probability on CCDF.
Power Gain
G
ps
10
12
dB
Drain Efficiency
η
D
17
21
%
Adjacent Channel Power Ratio
ACPR
41
36
dBc
Typical RF Performance
(In Freescale Test Fixture, 50
ο
hm system) V
DD
= 12 Vdc, I
DQ
= 650 mA, f = 3550 MHz
Output Power, 1 dB Compression Point, CW
P1dB
30
W
1. Measurements made with device in test fixture.
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