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參數(shù)資料
| 型號(hào)： | MRFE6S9130HR3 |
| 廠商： | 飛思卡爾半導(dǎo)體(中國(guó))有限公司 |
| 英文描述： | RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
| 中文描述： | 射頻功率場(chǎng)效應(yīng)晶體管N溝道增強(qiáng)型MOSFET的外側(cè) |
| 文件頁(yè)數(shù)： | 3/11頁(yè) |
| 文件大?。?/td> | 422K |
| 代理商： | MRFE6S9130HR3 |
MRFE6S9130HR3 MRFE6S9130HSR3
3
RF Device Data
Freescale Semiconductor
Figure 1. MRFE6S9130HR3(SR3) Test Circuit Schematic
Z14
Z15
Z16
Z17
PCB
0.045
″
x 0.220
″
Microstrip
0.755
″
x 0.080
″
Microstrip
0.496
″
x 0.080
″
Microstrip
0.384
″
x 0.080
″
Microstrip
Arlon GX-0300-55-22, 0.030
″
,
ε
r
= 2.55
Z1
Z2
Z3
Z4
Z5
Z6, Z11
0.383
″
x 0.080
″
Microstrip
1.250
″
x 0.080
″
Microstrip
0.190
″
x 0.220
″
Microstrip
0.127
″
x 0.220
″
Microstrip
0.173
″
x 0.220
″
Microstrip
0.200
″
x 0.220
″
x 0.620
″
Taper
Z7
Z8
Z9
Z10
Z12
Z13
0.220
″
x 0.630
″
Microstrip
0.077
″
x 0.630
″
Microstrip
0.146
″
x 0.630
″
Microstrip
0.152
″
x 0.630
″
Microstrip
0.184
″
x 0.220
″
Microstrip
0.261
″
x 0.220
″
Microstrip
Z1
RF
INPUT
C1
C2
Z2
Z3
Z4
Z5
Z6
C4
C5
DUT
Z8
Z9
C9
C8Z10
C10
C11
C12
C13
RF
OUTPUT
C3
Z7
Z11 Z12
Z13
Z14
Z15
Z16
Z17
C6
C7
B1
B2
V
BIAS
L1
L2
C14
C15
C16
C17 C18
C19
V
SUPPLY
+
+
+
+
+
Table 5. MRFE6S9130HR3(SR3) Test Circuit Component Designations and Values
Part
B1, B2
Ferrite Beads, Short
C1, C13, C14
47 pF Chip Capacitors
C2
8.2 pF Chip Capacitor
C3, C11
0.8-8.0 pF Variable Capacitors, Gigatrim
C4, C5
12 pF Chip Capacitors
C6
20 K pF Chip Capacitor
C7, C16, C17, C18
10
μ
F, 35 V Tantalum Chip Capacitors
C8, C9
10 pF Chip Capacitors
C10
11 pF Chip Capacitor
C12
0.6-4.5 pF Variable Capacitor, Gigatrim
C15
0.56
μ
F, 50 V Chip Capacitor
C19
470
μ
F, 63 V Electrolytic Capacitor
L1, L2
12.5 nH Inductors
Description
Part Number
Manufacturer
Fair Rite
ATC
ATC
Johanson
ATC
ATC
Kemet
ATC
ATC
Johanson
Kemet
United Chemi-Con
Coilcraft
2743019447
ATC100B470JT500XT
ATC100B8R2BT500XT
27291SL
ATC100B120JT500XT
ATC200B203KT50XT
T491D106K035AT
ATC100B7R5JT500XT
ATC100B110JT500XT
27271SL
C1825C564J5GAC
ESME630ELL471MK25S
A04T-5
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MRFE6S9130HR3_08 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
| MRFE6S9130HR5 | 功能描述:射頻MOSFET電源晶體管 HV6E 900MHZ 130W NI780H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRFE6S9130HSR3 | 功能描述:射頻MOSFET電源晶體管 HV6E 900MHZ 130W NI780H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRFE6S9130HSR5 | 功能描述:射頻MOSFET電源晶體管 HV6E 900MHZ 130W NI780HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRFE6S9135HR3 | 功能描述:射頻MOSFET電源晶體管 HV6E 900MHZ 135W NI880 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
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